Digital and Memory Circuits in nano-scale CMOS Technologies
Digital and Memory Circuits in nano-scale CMOS Technologies
批准号:
205034-2012
负责人:
Sachdev, Manoj
金额:
$5.1万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31
中文摘要
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英文摘要
Realization of robust integrated circuits in state of the art technologies is becoming increasingly difficult. The technology scaling makes transistors susceptible to process variations, and improper functioning of a single transistor may lead to the chip failure containing several million transistors. Often small as possible transistor sizes are used to reduce power, energy consumption, and to increase the packing density. Unfortunately, transistors with smaller dimensions exhibit a higher susceptibility to process variation. In particular, low-voltage, low-power Static Random Access Memory (SRAM) circuits show higher degree of variation owing to smallest possible transistor dimensions. In this research, we will investigate variability-aware design of digital, SRAM circuits in power and voltage constrained environments. In microprocessors up to 70-80% of transistors are in SRAMs. As a consequence, various aspects of Systems on Chip (SoC) - power, energy, yield, quality, and reliability are influenced by SRAMs.
The proposed research has two broad segments - (a) SRAM circuits, and (b) logic circuits. In the first segment, few aspects of SRAMs will be investigated. The key objectives of this research are (i) to lower SRAM power consumption through architectural and circuit innovation. We will design functional SRAMs working at sub-threshold voltages. (ii) To devise circuit techniques to alleviate the impact of process variations on important SRAM blocks such as the sense amplifier. We will investigate new architectures and circuits for the sense amplifier. (iii) Design soft error robust SRAM cells that can recover from single event upsets. In the second segment of the research, we will investigate high speed digital circuits working at the nominal voltage. Research on high speed circuits will entail investigation of high speed logic styles. This work builds on our recent research on Constant Delay (CD) logic style. Building blocks such as adder will be designed to demonstrate effectiveness of new logic families for high-speed applications.
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会议论文
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批准号:RGPIN-2017-05044
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项目类别:Discovery Grants Program - Individual
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资助金额:$6.85万
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财政年份:2021
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负责人:Sachdev, Manoj
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:RGPIN-2017-05044
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2020
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:DGDND-2017-00080
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项目类别:DND/NSERC Discovery Grant Supplement
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资助金额:$2.91万
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财政年份:2019
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负责人:Sachdev, Manoj
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:RGPIN-2017-05044
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2019
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负责人:Sachdev, Manoj
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:RGPIN-2017-05044
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2018
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负责人:Sachdev, Manoj
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:DGDND-2017-00080
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项目类别:DND/NSERC Discovery Grant Supplement
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资助金额:$2.91万
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财政年份:2018
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负责人:Sachdev, Manoj
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依托单位:
Implementation of thin-film transistor de-multiplexer for integrated backplane drivers
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批准号:516248-2017
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项目类别:Idea to Innovation
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资助金额:$9.11万
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财政年份:2017
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负责人:Sachdev, Manoj
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:DGDND-2017-00080
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项目类别:DND/NSERC Discovery Grant Supplement
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资助金额:$2.91万
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财政年份:2017
-
负责人:Sachdev, Manoj
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依托单位:
Exploring Memory and Digital Circuit Boundaries for Energy Efficient Hardware
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批准号:RGPIN-2017-05044
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2017
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负责人:Sachdev, Manoj
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依托单位:
Digital and Memory Circuits in nano-scale CMOS Technologies
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批准号:205034-2012
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项目类别:Discovery Grants Program - Individual
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资助金额:$5.1万
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财政年份:2016
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负责人:Sachdev, Manoj
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依托单位:
Low-power logic gates in thin film technologies
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批准号:500171-2016
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项目类别:Idea to Innovation
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资助金额:$1.09万
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财政年份:2016
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负责人:Sachdev, Manoj
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依托单位:
Design and analysis of SRAM-based PUF primitives in nanoscale CMOS technolgies
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批准号:484190-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Sachdev, Manoj
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依托单位:
Digital and Memory Circuits in nano-scale CMOS Technologies
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批准号:205034-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$5.1万
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财政年份:2014
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负责人:Sachdev, Manoj
-
依托单位:
Digital and Memory Circuits in nano-scale CMOS Technologies
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批准号:205034-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$5.1万
-
财政年份:2013
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负责人:Sachdev, Manoj
-
依托单位:
Digital and Memory Circuits in nano-scale CMOS Technologies
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批准号:205034-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$5.1万
-
财政年份:2012
-
负责人:Sachdev, Manoj
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依托单位:
Metastability hardened design and analysis in scaled CMOS technologies
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批准号:419526-2011
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2011
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负责人:Sachdev, Manoj
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依托单位:
Architectures, circuits for ultra low voltage, low power, robust SRAMs
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批准号:205034-2007
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.02万
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财政年份:2011
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负责人:Sachdev, Manoj
-
依托单位:
Architectures, circuits for ultra low voltage, low power, robust SRAMS
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批准号:349727-2007
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项目类别:Discovery Grants Program - Accelerator Supplements
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资助金额:$2.19万
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财政年份:2010
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负责人:Sachdev, Manoj
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依托单位:
Architectures, circuits for ultra low voltage, low power, robust SRAMs
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批准号:205034-2007
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.02万
-
财政年份:2010
-
负责人:Sachdev, Manoj
-
依托单位:
Architectures, circuits for ultra low voltage, low power, robust SRAMS
-
批准号:349727-2007
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项目类别:Discovery Grants Program - Accelerator Supplements
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资助金额:$2.19万
-
财政年份:2009
-
负责人:Sachdev, Manoj
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依托单位:
国内基金
海外基金
CREB在杏仁核神经环路memory allocation中的作用和机制研究
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批准号:31171079
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项目类别:面上项目
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资助金额:55.0万元
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批准年份:2011
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负责人:周宇
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依托单位:
面向多核处理器的硬软件协作Transactional Memory系统结构
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批准号:60873053
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项目类别:面上项目
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资助金额:30.0万元
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批准年份:2008
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负责人:刘轶
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依托单位: