GaN technology used for the fabrication of stable and high efficiency rectifier

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In microelectronics, silicon is the most widely used material. Strong efforts have been made by the industry leaders to overcome the silicon physical limitations in order to satisfy the expectations of the microelectronics market in terms of miniaturization and performances. Currently, silicon technology seems to have reached its ultimate limit. This presents a great opportunity for III-V semiconductors that offer a good alternative and a very wide selection of materials. These semiconductors have electrical and optical properties which exceed those of silicon. The devices based on III-V materials have great potential for many kind of application, like high added value applications (CPV, embedded system ...) and general public applications (domestic AC-DC converters). In addition, these components have a very high energy efficiency which is an essential criterion for the technological development of the next decade. In this collaboration "Engage-NSERC", the project dials with the power conversion systems such as DC/DC converters and more particularly the problems associated with interconnections losses between the silicon driver and the GaN power device. The objective of this project is the development of a "full GaN" technological process including the driver and the power device in order to eliminate the parasitic losses and effects which limit the device performance. This project will bring together academic and industrial players both having an expertise in III-V semiconductor applied to the field of power electronics. The collaboration will establish a partnership with GaNSystems in order to develop a new "full GaN" power circuit manufacturing technology lends to be industrialized.