Evaluation of the Performance of GaN HEMT in High Power Multilevel Converters

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Gallium Nitride (GaN) power semiconductor devices are promising solutions for increasing the efficiency andpower density of power electronics systems. GaN Systems Inc is a world leading company that produce GaNhigh-electron-mobility transistor (HEMT) devices. GaN HEMTs have been applied in many low voltage andlow power applications. For high power systems, the performances of GaN HEMTs have not been fullyevaluated. In this Engage project, researchers in University of Alberta will collaborate with GaN Systemsengineers to developing a 50kW GaN HEMT based multilevel converter prototype and study the performancesof the GaN devices experimentally using the prototype. The project includes circuit parameter design of theprototype, sensing and control scheme development considering the key challenges caused by high switchingfrequency noises, and experimental study and analysis of the results.