氢能钝化硅中复合中心的电活性，改善材料和器件性能。本项目研究微氮直拉硅单晶中氢和氮、氮氧复合体、氮关缺陷和过渡金属的作用规律，研究氢对氮氧复合体和其他金属电活性杂质的钝化作用和钝化机理，从而达到利用氢处理改善微氮硅单晶的目的。另一方面，本项目研究氮对硅中氢相关缺陷的影响作用。

Hydrogen can passivate recombination centers in silicon and improve the.quality of silicon materials and devices. Since it was proved that hydrogen could passivate the impurities and defects in silicon, hydrogen in silicon has been one of the most interest. This project mainly focused on the effect mechanism of hydrogen on nitrogen, N-O complexes, other.nitrogen-related defects and transition metals in nitrogen-doped CZ silicon. The project has finished the scheduled plan and got satisfied results, which indicated that the nitrogen-oxygen complexes including the absorption lines in the middle infrared region (m-N-O) and far infrared region (f-N-O) were electrically active and could be passivated as shallow.donors by hydrogen. The hydrogen passivation on these shallow donors was.more stable than on the thermal donors. Furthermore, due to the effect of nitrogen, oxygen could trap hydrogen, resulting in the longer hydrogen.passivation depth in NCZ than in CZ. By investigating the concentration.difference of metals in silicon after annealing, we found that under middle and low temperature the diffusion of Au in NCZ was always inferior to that in CZ. The project could be benefit of improving the NCZ silicon wafers.