硅晶体是太阳能光伏的基础材料。高度补偿的低成本硅晶体在产业上有重要的应用前景，但是其基础理论研究在国内外尚没有开展。本项目研究高浓度杂质补偿对光伏用硅晶体及太阳电池性能的影响规律，项目将揭示高浓度杂质补偿对载流子迁移率、扩散长度等电学性能影响，阐明高浓度补偿对开路电压、短路电流等太阳电池性能参数的影响，指出高浓度杂质补偿对硅晶体光衰减中心的形成、消除、失活等动力学行为及机理，并说明高浓度杂质补偿对硅晶体中金属杂质行为、吸杂工艺的作用规律，从而为高浓度补偿的低成本光伏用硅晶体（如UMG-Si）在太阳电池上广泛应用提供理论指导。

Crystalline silicon is the basic material of photovolatics. The higher compensated low cost silicon could be widely used in the industry in future. However, few reports about the influence of higher compensation of carriers on the property of silicon crystal and efficiency of silicon solar cells have been published. This project will focus on how the carrier compensation affects on the electrical property of silicon crystal and silicon solar cells. Comparison with conventional silicon, the mobility and diffusion length of minor carrers in higher compensated silicon will be discussed. Short circuit current and open circuit voltage of silicon solar cells made from higher compensated silicon willl be investigated.The influence of higher compensation of carriers on the formation, elimination of centers related light-induced degradation will be studied. Finallly, Metal properties and gettering mechanism will be also studied. Those results will be benefit for the application of low cost higher compensated silicon.