Fort Monmouth Interaction: Fabrication and Characterization of Real-Space Transfer Dual Switching Field-Effect Using III-V Modulation-Doped Heterostructures

该研究方案涉及装置设计、装置 材料的优化，以及制造和表征的一种新的 场效应晶体管结构的基础上的实空间转移的2-D电子内 量子阱 研究将在双方同意的情况下进行。 PSU电子技术中心与 材料和器件（CEMD），以及电子技术和 美国陆军研究与发展司令部设备实验室（ETDL）， 英尺新泽西州，蒙茅斯。 这项工作将在新成立的国家科学基金会下进行 美国陆军联合研究计划，涉及大学和美国陆军 研究实验室。 一个PSU的研究生助理在 首席研究员将获得广泛的 微电子设施存在于ETDL，其中器件级 将进行用于器件制造的材料生长和处理 由他和ETDL的技术和科学工作人员共同完成。 研究工作将涉及优化分子束外延生长的 用于实空间的AlGaAs/GaAs异质结构III-V族材料 转移FET结构，测试器件结构的制造， 用于确定性能的电气特性 限制，并通过测量特性的解释， 理论建模 第一年的研究将根据 一种测试结构，由于一年的NSF资助而发展 在其“小说概念加速奖”计划下。 结果 第一年的研究将被翻译成一个改进的版本， 该新颖器件结构及其特性将 研究了 本研究的重点将放在实际的 制造的测试设备结构在高速III- V开关集成电路。

This research proposal is concerned with the device design, device material optimization, and fabrication and characterization of a novel FET structure based on real-space transfer of 2-D electrons within a quantum well. The research will be carried out under mutually agreed collaborative arrangements between the PSU Center for Electronic Materials and Devices (CEMD), and the Electronic Technology and Devices Laboratory (ETDL), US Army Research and Development Command, Ft. Monmouth, NJ. This effort will be under the newly established NSF and US Army Joint Research Program involving universities and US Army Research Laboratories. A PSU graduate assistant working under the principal investigator will be given access to the extensive microelectronics facilities that exist at the ETDL where device grade materials growth and processing for device fabrication will be carried out jointly by him and the ETDL technical and scientific staff. The research effort will involve optimization of the MBE-grown AlGaAs/GaAs heterostructure III-V material for the proposed real-space transfer FET structure, fabrication of the test device structures, their electrical characterization for determination of performance limitation, and interpretations of measured characteristics through theoretical modeling. The first year study will be conducted based on a test structure that has evolved as a result of a one-year NSF grant under its "Expedited Award for Novel Concepts" program. The results of the first year study will be translated into an improved version of the novel device structure and its characteristics will be investigated. The emphasis of this study will be on the practical usefulness of the fabricated test device structures in high speed III- V switching integrated circuits.