Studies of Antimony-Containing III-V Semiconductors and Heterostructure Devices

利用含锑合金和异质结构设计电子和光电器件的可能性在很大程度上尚未得到探索。部分问题是由于这些化合物在相图中表现出混相间隙和旋多分解。分子束外延通常是一种远离平衡的生长技术，因此，允许这些化合物在混相间隙内低温生长。然而，材料可能有严重的合金团簇，因此，我们建议使用原位和非原位表征技术来研究这些合金和异质结构的生长。特别是，我们将以晶格匹配和应变的GaSb， GaAlSb和InAsSb的增长开始我们的计划，这将是许多电子和光学器件的极其关键的材料。层的表征将通过温度相关的霍尔，光致发光，吸收DLTS和舒布尼科夫-德哈斯测量来完成。这些应该提供关于基本材料特性的丰富数据。此外，将进行原位RHEED振荡研究，以研究生长动力学。

The possibilities of electronic and opto-electronic device design using the Sb-containing alloys and heterostructures are largely unexplored. Part of the problem arises from the fact that some of these compounds exhibit miscibility gaps and spinodal decompositions in the phase diagrams. Molecular beam epitaxy is generally a far- from-equilibrium growth technique and, therefore, allows the low- temperature growth of these compounds within the miscibility gap. However, the materials can have severe alloy clustering and we, therefore, propose to study the growth of these alloys and heterostructures with in-situ and ex-situ characterization techniques. In particular, we will initiate our program with the growth of lattice-matched and strained GaSb, GaAlSb, and InAsSb, which will be extremely critical materials for a host of electronic and optical devices. Characterization of the layers will be done by temperature- dependent Hall, photoluminescence, absorption DLTS and Shubnikov-de Haas measurements. These should give a wealth of data regarding the fundamental materials characteristics. In addition, in-situ RHEED oscillations studies will be done to study the growth kinetics.