III-V Heterostructures on Silicon Substrates Prepared by Organometallic Chemical Vapor Deposition

硅上外延III-V族最有前途的应用之一是 材料技术是一个整体集成， 硅集成电路的光电功能。 而 这种集成技术的简单实现已经 但很少有人注意到， 异质结构，最适合集成GaAs和 Si器件从材料和器件两个角度起作用。 该计划的目的是制定一套标准， 可用作建筑材料的III-V族异质结构组件 用于光波应用特别是光电应用的块体 集成电路，大面积外延生长制造 Si衬底，使用OMCVD。 这个三阶段计划的第一阶段 将通过一项技术来确定这种技术的可行性。 OMCVD生长AlGaAs/GaAs外延结构的评价 Si衬底。 实验结构将具有代表性 制造光源和探测器所需的材料。 波导和调制器。 它们的生长和性质 将对结构进行调查。 第二阶段将侧重于这些系统的整体集成。 Si衬底上的组件。 特别是，我们将探索 选择性外延实现不同的集成 件. 第三阶段将重点放在商业化， 设备技术。

One of the most promising applications of epitaxial III-V on Si materials technology is the monolithic integration of optoelectronic functions with Si integrated circuits. While simple implementations of this integrated technology have been demonstrated, there has been little attention paid to the types of heterostructures that are best suited for integration of GaAs and Si device functions from both material and device perspectives. The purpose of this program will be to develop a set of standard III-V heterostructure components that can be used as building blocks for lightwave applications, particularly optoelectronic integrated circuits, fabricated by epitaxial growth on large-area Si substrates using OMCVD. Phase I of this three phase program will determine the feasibility of such a technology through an evaluation of AlGaAs/GaAs epitaxial structures grown by OMCVD on Si substrates. The experimental structures will be representative of those needed for the fabrication of optical sources, detectors. waveguides, and modulators. The growth and properties of these structures will be investigated. Phase II will focus on the monolithic integration of these components on Si substrates. In particular, we will explore selective epitaxy to implement be integration of the different components. Phase III will focus on the commercialization of this device technology.