Study of MBE Grown Heterojunctions Based on InAs Substrates

InAs作为MBE衬底的应用 生长的异质结优于10-3 晶格匹配应该提供一个 电子和光子异质结范围 高迁移率和低带隙器件 比在GaAs衬底上可用的那些更好。 关于屏障（Ec， Ev）预期用于这样的异质结或 这种结构的传输特性， 我们会研究这些问题。 这是第一次 对未来光电和 光子器件（探测器、激光器和 调制器）。 材料的带隙 晶格匹配InAs范围 从0.35到1.2 eV，因此覆盖了 大气传输窗口高达2.6 嗯. InAs上的多异质结层 衬底也可能是FET感兴趣的 和双极晶体管应用。 肖特基势垒和异质结特性 (np、pn、nn和pp）。 的 生长的层将被表征为光学特性。 相互作用、结构缺陷和变形 在体和在 在80 K的温度下，

The use of InAs as a substrate for MBE- grown heterojunction with better than 10-3 lattice-matching should make available a range of electronic and photonic heterojuction devices of high mobilities and lower bandgaps than those available on GaAs substrates. Little is known about either the barriers ( Ec, Ev) expected for such heterojunctions or the transport properties of such structures and these will be studied. This is of primary importance to future electrooptical and photonic devices (detectors, lasers and modulators). The bandgaps of materials available which lattice-match to InAs range from 0.35 to 1.2 eV and therefore cover the atmospheric transmission windows out to 2.6 um. Multiple heterojunction layers on InAs substrates may also be of interest for FET and bipolar transistor applications. Schottky barrier and heterojunction behavior (np, pn, nn and pp) will be investigated. The grown layers will be characterized for optical interaction, structural imperfections and for generation-recombination in the bulk and at the interfaces at temperatures down to 80K.