Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics

该研究项目研究了利用分子束外延(MBE)技术生长非常高质量的镓/砷化镓异质结薄膜结构的材料科学和物理。研究的第一个目标是优化分子束外延生长高质量的、选择性掺杂的界面和异质结构薄膜，使缺陷最少。这种结构将使半导体物理中的一种新制度变得容易理解，在这种制度下，新的现象将产生于电子-电子相互作用以及在很长的平均自由程极限下的单电子物理。通过量子传输测量来研究这些现象是这项研究的第二个目标。

This research program studies the materials science and physics of the growth of very high-quality gallium arenide/aluminum gallium arsenide heterojunction thin-film structures using the molecular beam epitaxy (MBE) technique. The first objective of the research is to optimize the MBE growth of high-quality, selectively-doped interfaces and heterostructure thin films with minimal imperfections. Such structures will make accessible a new regime in semiconductor physics where new phenomena will result from electron-electron interactions as well as one- electron physics in the very long mean-free-path limit. Studies of these phenomena through quantum transport measurements are the second objective of the research.