Laser-Assisted Atomic Layer Epitaxy for Selective Area Deposition of InGaAsP/InP Optoelectronic Devices

提出了一项实验计划，研究激光辅助层外延（LALE）在InGaAsP/InP基光电器件选择性区域沉积中的应用。LALE工艺用于InGaAsP/InP异质结构的选择性区域沉积的演示可能会彻底改变目前用于生长和制造这些器件的方法。目前光电集成电路（OEICs）的制造技术涉及几种外延生长运行和加工顺序。另一方面，LALE将提供一个空间控制的外延过程，以在一次生长运行中生长oeic。在InGaAsP/InP材料体系中，LALE在光通信和光子集成电路中发挥着越来越重要的作用。本项目的主要目的是在金属有机化学气相沉积系统（MOCVD）中演示InGaAs和InGaAsP的LALE。

An experimental project is proposed to investigate laser-assisted layer epitaxy (LALE) for the selective area deposition of InGaAsP/InP based optoelectronic devices. Demonstration of the LALE process for the selective area deposition of InGaAsP/InP heterstructures could revolutionize the methods currently used to grow and fabricate these devices. Current fabrication techniques for optoelectronic integrated circuits (OEICs) involve several epitaxial growth runs and processing sequences. On the other hand, LALE would provide a spatially controlled epitaxial process to grow OEICs in a single growth run. TO date, no research has been conducted on LALE in the InGaAsP/InP materials system, which is playing an every increasing role in optical communication and photonic integrated circuits. The principal objective of this project is to demonstrate the LALE of InGaAs and InGaAsP in a metalorganic chemical vapor deposition system (MOCVD).