Silicon Carbide (SiC) transistor characterization and modeling for very high-temperature integrated circuit applications (25-400'C and above)

这项研究关注的是 环境和衬底温度（25 oC至400 oC 或更高）的终端特性 集成碳化硅（六边形或6 H多型体 - SiC）MOS场效应晶体管。 这项工作将 注重详细的实验和分析 大、小信号参数的建模 晶体管，特别强调泄漏 电流、沟道迁移率和温度- 感应阈值电压随衬底偏压而偏移。

This research concerns the effects of elevated ambient and substrate temperatures (25oC to 400oC or higher) on the terminal characteristics of integrated Silicon Carbide (hexagonal or 6H polytype - SiC) MOS Field-Effect transistors. The work will focus on the detailed experimental and analytical modeling of large and small signal parameters of the transistors, with particular emphasis on leakage currents, on channel mobility, and on temperature- induced threshold voltage shifts with substrate bias.