Molecular Doping of Semiconductors: Lanthanide-impurity Complexes for Light Emitting Diodes

将进行一项基础研究，以解决半导体（III-V，硅和SiGe）用于发光器件的稀土掺杂的可行性。方法是以铒分子和另一种杂质（氧或氮）的形式引入铒。这将通过控制生长化学和使用新的前驱体来实现，这些前驱体被设计成以这样一种方式分解，在生长表面形成Er-O和Er-N自由基，并以这种形式纳入层中。通过掺杂分子的杂质部分捕获载流子，然后将能量转移到铒，有望提供4f内壳层发光的有效激发途径。这项研究将探索一种从半导体中获得发光的新方法。潜在的好处包括在高性能电子和光子器件以及用于计算、信息处理和电信的集成电路中提供新型器件和光学互连的能力。

A fundamental study to address the feasibility of rare earth doping of semiconductors(III-V, Silicon, and SiGe) for light emitting devices will be conducted. The approach is to introduce erbium in the form of moleclules of erbium and another impurtiy(oxygen or nitrogen). This will be achieved by control of growth chemistry and use of novel precursors, which are designed to decompose in sucha a way as to form Er-O and Er-N radicals on the growth surface and be incorporated in this form into the layer. Capture of carriers by the impurity part of a dopant molecule followed by energy transfer to erbium is expected to provide an efficent excitation route of intra-4f shell luminescence. %%% This research will investigate a new method for obtaining light emission from semiconductors. Potential benefits include the ability to provide novel devices and optical interconnects in high performance electronic and photonic devices and integrated circuits used in computing, information processing, and telecommunications.