Radiative and Non-radiative Centers in Indium Phosphide Alloy Thin Films and Heterostructures

晶体中辐射和非辐射缺陷的基础研究 外延磷化铟及其铝合金， 将进行镓。 缺陷及其性质 由于故意掺杂合金， 研究;待研究的具体缺陷现象包括： 1)深能级本征缺陷的形成和稳定性 自补偿，2）形成深施主能级 具有简单的替代杂质，和3）等电子， 稀土中心及其配合物。 磷化铟合金 薄膜和异质结构将由金属有机 气相外延 光致发光、光电导和 深能级瞬态谱将用于确定 缺陷参数和缺陷稳定性。为了确定对称性 以及辐射和非辐射深能级的识别 将使用缺陷偏振激发光谱， 与其他对称敏感测量结果进行比较。 的 最新的理论对本征缺陷稳定性的适用性 将对这些合金进行检查。 最近的电子理论 稀土杂质及其光学性质 配合物将根据实验结果进行检验。 %%% 将对影响人口增长的因素进行研究。 化合物半导体的电子和光学性质 材料. 这项研究有望提供一个基本的 了解缺陷对材料性能的影响， 性能 研究中的半导体具有广泛的 在电子和光电器件中的适用性; 了解缺陷结构也将改善 由这些材料制成的设备的性能。 新光子 这些研究可能会产生材料和器械， 器件和集成电路的显著改进 目前用于计算、信息处理和 电信。

Fundamental studies of the radiative and non-radiative defects in epitaxial indium phosphide and its alloys with aluminum and gallium will be undertaken. Defects and their properties resulting from deliberate doping of the alloys will be investigated; specific defect phenomena to be studied include: 1)formation and stability of deep level native defects by self-compensation, 2)formation of deep donor levels associated with simple substitutional impurities, and 3)isoelectronic, rare-earth centers and their complexes. Indium phosphide alloy thin films and heterostructures will be prepared by metalorganic vapor phase epitaxy. Photoluminescence, photoconductivity and deep level transient spectroscopy will be used to determine defect parameters and defect stability. To determine the symmetry and identification of the radiative and non-radiative deep level defects polarized excitation spectroscopy will be used and the results compared to other symmetry sensitive measurements. The applicability of recent theories on native defect stability in these alloys will be examined. Recent theories on the electronic and optical properties of rare-earth impurities and their complexes will be examined with respect to experimental results. %%% Research will be conducted on the factors that influence the electronic and optical properties of compound semiconductor materials. This research is expected to give a fundamental understanding of the effect of defects on material properties and performance. The semiconductors under study have wide applicability in electronic and optoelectronic devices; understanding the defect structure will also improve the performance of devices made from these materials. New photonic materials and devices may result from these studies as well as significant improvements in devices and integrated circuits currently used in computing, information processing, and telecommunications.