Photo-induced Changes and Transport in Amorphous Semiconductors

技术摘要：这项研究旨在了解光如何在非晶半导体的局部结构中产生缺陷和其他变化。这些变化可以是有益的，例如用于光刻的硫系玻璃或用于控制透明电极的电子特性的氧化铟薄膜。另一方面，它们可能会导致非晶硅太阳能电池的光降解。这些光诱导的变化发生在光激发的电子-空穴对的复合过程中。研究光载流子重组和输运的温度依赖性以及缺陷产生动力学将有助于我们理解光致变化的微观机制。将利用空间上限制光载流子在超薄的非晶半导体层中来探索降维效应。光诱导的变化将用于氧化铟中，以探索电子传导的变化和电子状态的局域化。非技术摘要：这项研究旨在了解光如何在非晶半导体的局部结构中产生缺陷和其他变化。这些变化可以是有益的，例如用于光刻的硫系玻璃或用于控制透明电极的电子特性的氧化铟薄膜。另一方面，它们可能会导致非晶硅太阳能电池的光降解。研究光载流子复合和输运的温度依赖性以及缺陷产生动力学将有助于我们理解光致变化的微观机制。* * *

9408670 Fritzsche Technical abstract: The research is aimed at understanding how light produces defects and other changes in the local structure of amorphous semiconductors. These changes can be beneficial such as in chalcogenide glasses used for photolithography or in Indium oxide films for controlling the electronic properties of transparent electrodes. On the other hand, they can be detrimental leading to photodegration of amorphous silicon solar cells. These photo-induced changes occur during recombination of photo-excited electron-hole pairs. The study of the temperature dependence of the recombination and transport of photocarriers and of the defect generation-kinetics will help us to understand the microscopic mechanisms of the light-induced changes. Use will be made of spatially confining the photocarriers in ultra-thin layers of amorphous semiconductors to explore the effect of reduced dimensionality. The light-induced changes will be used in Indium oxide to explore changes in electronic conduction ad the electronic states become localized. non-technical abstract: The research is aimed at understanding how light produces defects and other changes in the local structure of amorphous semiconductors. These changes can be beneficial such as in chalcogenide glasses used for photolithography or in Indium oxide films for controlling the electronic properties of transparent electrodes. On the other hand, they can be detrimental leading to photodegradation of amorphous silicon solar cells. The study of the temperature dependence of the recombination and transport of photocarriers and of the defect generation-kinetics will help us to understand the microscopic mechanisms of the light- induced changes. ***