Acquisition of Multi-User Instrumentation for the Epitaxial Growth and Fabrication of III-V Nitride Semiconductor Materials and Devices

仪器将用于金属有机化学气相沉积（MOCVD）和分子束外延（MBE）合成III-V型氮化物，使用学术研究基础设施计划的资金。主要项目包括射频加热III-V MOCVD氮化系统和用于MBE生长的氮等离子体源。铝、镓和氮化铟材料是紫外光至蓝光波段光电子器件中最有前途的材料。研究活动将集中于：1)III-V型氮化物半导体的新型外延生长技术的发展；2)外延生长机制的基础研究；3)紫外/蓝色激光二极管、高温电子和真空电子器件的制造。这项研究得到了工业界合作者的大力支持和兴趣。研究III-V型氮化物半导体的外延生长，最终目标是生产用于紫外线和蓝色波长的高质量激光二极管。III-V型氮化物半导体是高温电子器件和真空电子器件的有用材料。III-V型氮化物是技术上重要的器件材料，特别是在短波长和高温下。

Instrumentation will be acquired for the metallo-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) synthesis of III-V nitrides using funds from the Academic Research Infrastructure Program. The major items include a RF heated III-V MOCVD nitride system and a nitrogen plasma source for MBE growth. The aluminum, gallium and indium nitride materials are the most promising materials for optoelectronic devices to operate in the ultraviolet to blue wavelength regime. The research activities will focus on: 1) development of novel epitaxial growth technologies for III-V nitride semiconductors, 2) fundamental studies of the epitaxial growth mechanism, and 3) the fabrication of UV/blue laser diodes, high temperature electronics, and vacuum electronics devices. This research involves substantial support and interest from industrial collaborators. Studies of the epitaxial growth of III-V nitride semiconductors will be conducted with the ultimate objective of producing high quality laser diodes for use in the ultraviolet and blue wavelength regimes. The III-V nitride semiconductors are useful materials for high temperature electronics and also for vacumn electronics devices. The III-V nitrides are technologically important materials for devices, particularly at shorter wavelengths and at higher temperatures.