Microscopic Properties of Impurity-Hydrogen Complexes in Semiconductors

9415404斯塔沃拉氢是半导体中常见的高活性杂质。十多年来，人们已经知道氢与深能级杂质形成络合物并改变其电学性质，但由于无法获得结构敏感数据，这些含氢络合物仍然知之甚少。此前，PI发现，在硅中可以形成足够数量的氢与过渡金属杂质的络合物。这项研究将利用这一发现，使用结构敏感的方法，如红外吸收和电子顺磁共振光谱。利用这些技术，我们将研究几种氢化深度缺陷的微观结构和电学性质。这项工作的主要目标是发展对几个模型系统的基本理解，这些模型系统将为理解半导体中具有深能级缺陷的络合物提供基础。%的氢经常被引入半导体材料中，在那里它改变了缺陷和杂质的电学性质。例如，在太阳能电池或平板显示技术中使用的多晶或非晶态半导体中尤其如此，其中氢的存在是改善材料特性所必需的。由于以前很难确定氢缺陷的微观结构，所以还没有从根本上理解氢对缺陷性质的影响。在这项工作中，结构敏感的测量将被用来阐明硅中几个含氢缺陷的性质，这些缺陷可以作为模型来帮助理解半导体缺陷与氢的相互作用。***

9415404 Stavola Hydrogen is a common and highly reactive impurity in semiconductors. It has been known for more than a decade that hydrogen forms complexes with deep level impurities and modifies their electrical properties, but these hydrogen containing complexes have remained poorly understood because it has not been possible to obtain structure sensitive data. Previously the PI discovered that complexes of hydrogen with transition metal impurities in silicon can be formed in sufficient number. This research will take advantage of this finding to use structure sensitive methods like infrared absorption and electron paramagnetic resonance spectroscopies. The microscopic structures and electrical properties of several hydrogenated deeplevel defects will be investigated using these techniques. The primary goal of this work is to develop a fundamental understanding of several model systems that will provide a foundation for understanding complexes with deep-level defects in semiconductors. %%% Hydrogen is frequently introduced into semiconductor materials where it modifies the electrical properties of defects an impurities. This is particularly true, for example, in the polycrystalline or amorphous semiconductors used in solar cell or flat panel display technologies where the presence of hydrogen is necessary to improve material characteristics. It has not been understood at a fundamental level how hydrogen affects defect properties because, previously, it had been difficult to determine the microscopic structures of the hydrogen defects. In this work, structure-sensitive measurements will be made to elucidate the properties of several hydrogen containing defects in Si that can be used as models to help understand how semiconductor defects interact with hydrogen. ***