III-V Compound Semiconductor Molecular Beam Epitaxy/Free Standing Quantum Well Structures

这个少数民族职业发展奖（MCAA）项目解决了III-V型半导体材料外晶生长中表面和界面的基础研究问题，作为与劳伦斯利弗莫尔国家实验室在独立量子阱上的合作研究活动的一部分。该方法是选择性地蚀刻组成调制的III-V异质结构，以产生两侧被空气、真空或合适的填充材料限制的量子阱。随后的图案产生了水平悬浮在垂直支撑柱之间的量子阱。这种结构有利于探测固体的局部性质，例如，量子限制态与表面或界面态的相互作用。此外，屏障和悬浮材料之间固有的高对比度允许构建有效的法布里-珀罗腔反射镜，其尺寸在活性介质的自发发射波长的顺序上。这些材料和结构以及设备配置的基本特性将被探索。该项目涉及材料科学、物理和工程相结合的主题领域的前沿研究问题，具有很高的技术相关性。该研究将为电子/光子器件和集成电路的重要方面提供基础材料科学知识。该计划还提供了研究和教育的整合，通过培训学生在一个基本的和技术上重要的研究领域。* * *

9614036 Williams This Minority Career Advancement Award (MCAA) project addresses fundamental research issues of surfaces and interfaces in the epitaxial growth of III-V semiconductor materials as part of a collaborative research activity with Lawrence Livermore National Laboratory on free standing quantum wells. The approach is to selectively etch compositionally modulated III-V heterostructures to produce quantum wells which are confined on both sides by air, vacuum or suitable filler materials. Subsequent patterning then yields quantum wells suspended horizontally between vertical support posts. This structure is conducive for probing local properties of solids, e.g., the interaction of quantum confined states with surface or interface states. Also the inherent high contrast ratio between the barrier and suspended materials allows the construction of efficient mirrors for a Fabry-Perot cavity with dimension on the order of the spontaneous emission wavelength of the active medium. Fundamental properties of these materials and structures as well as device configurations will be explored. %%% The project addresses forefront research issues in a topical area combining material science, physics and engineering, and having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry. The program also provides for the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***