GOALI: New Dielectrics for Development of Metal to Metal Antifuse for FPGA

小行星9614593 mm 1本提案提出了一项计划，用于开发使用a-Six、C1-x：H、a-C：H和a-C：H、N、F晶体管的现场可编程门阵列（FPGA）的新型金属对金属反熔丝结构，其技术将转让给Actel公司进行工艺集成。 授予机会与行业学术联络（GOALI）是一个适当的计划，为拟议的工作，因为该计划促进了跨学科的大学产业合作，在高风险/高收益的研究领域，这将不会由行业进行。 FPGA的应用非常广泛。无论设备设计使用大量中小型IC，FPGA都有可能提供更快、更紧凑和更可靠的解决方案。 基本的反熔丝是夹在导体之间的薄绝缘层，通过施加高电压来改变（编程）。 目前，商业上生产的两种类型的反熔丝：n+ Si/ONO/多晶硅反熔丝（其中ONO代表氧化物/氮化物/氧化物）和金属/非晶硅/金属反熔丝。 虽然n+ Si/ONO/polySi的应用是相当有前途的，但ONO显示出强烈的时间相关的介质击穿（TDDB）行为。 a-Si反熔丝的最大问题是，当被高电流脉冲施加应力时，编程的反熔丝有时会恢复到高阻抗状态。 PI与Texas Instruments合作，成功开发了具有极有前途特性的非晶碳（a-C：H）和非晶碳化硅（a-SiC：H）反熔丝。 与目前使用的非晶硅（a-Si：H）金属到金属反熔丝相比，金属到金属a-C：H和a-C：H、N、F反熔丝显示出低三个数量级的漏电流、低两倍的击穿电压、相似的导通状态电阻和上级导通状态稳定性。 我们的工业合作伙伴Actel公司对德克萨斯理工大学a-C：H，N，F反熔丝结构的开发非常感兴趣，这种结构可以在1999年的时间框架内转移并集成到他们的0.6微米CMOS工艺中。 由于有限的设备和工程资源的限制，Actel很难在没有德克萨斯理工大学的帮助下研究此类材料。 我们建议改变工艺条件，如CH 4/NF 3流量，射频功率，偏压，压力和存款a-C：H，N，F薄膜与不同浓度的氢，氮和氟在我们的PECVD系统。 反熔丝特性与薄膜中N、F、H含量之间的关系将被广泛研究，以优化器件。 我们还将使用二乙基硅烷和甲烷来存款a-SixC 1-x：H。 德克萨斯理工大学最有前途的反熔丝结构将在Actel公司进行进一步的可靠性测试。 选定的结构将被转移到Actel公司进行进一步开发，并纳入0.6微米CMOS工艺流程。 根据NSF的支持，Actel公司将提供204，730美元的匹配，其中包括60，000美元的资金和144，730美元的实物支持，包括样本和样本分析，处理，调查员时间和捐赠的设备。 得克萨斯理工大学提供了58,200美元作为配套资金，给予PI休假，在Actel公司工作，并免除了Actel公司提供的60,000美元资金的间接费用。 *** MM1

9614593 Gangopadhyay mm1 This proposal presents a plan for the development of new metal to metal antifuse structures for the field programmable gate arrays (FPGAs) using a-Six,C1-x:H, a-C:H, and a-C:H,N,F dielectrics, technology of which will be transferred to Actel Corporation for process integration. Grant Opportunities for Academic Liaison with Industry (GOALI) is an appropriate program for the proposed work, because this program promotes an interdisciplinary university-industry collaboration in high-risk/high gain research areas which would not have been undertaken by industry. The applications of FPGAs are numerous. Wherever a device design uses a substantial amount of small and medium scale ICs, there exists the potential for an FPGA to provide a faster, more compact and more reliable solution. The basic antifuse is a thin insulating layer sandwiched between conductors that gets altered (programmed) by the application of a high voltage. At present, two types of antifuses are commercially produced: the n+ Si/ONO/poly Si antifuse (where ONO stands for Oxide/Nitride/Oxide) and the metal/amorphous silicon/metal antifuse. Although the applications of n+ Si/ONO/poly Si are quite promising, the ONO shows strong time dependent dielectric breakdown (TDDB) behavior. The biggest problem with a-Si antifuses is that a programmed antifuse sometimes reverts to a high impedance state, when it is stressed with a high current pulse. In collaboration with Texas Instruments, the PI has been very successful in developing amorphous carbon (a-C:H) and amorphous silicon carbide (a-SiC:H) antifuses with extremely promising properties. The metal to metal a-C:H and a-C:H,N,F antifuses showed three orders of magnitude lower leakage current, factor of two lower breakdown voltage, similar On-state resistance, and superior On-state stability compared to currently used amorphous silicon (a-Si:H) metal to metal antifuses. Actel Corporation, our industrial collaborator is extremely interested in the deve lopment of a-C:H,N,F antifuse structures at Texas Tech, which can be transferred and integrated into their 0.6 micron CMOS process within 1999 time frame. It is difficult for Actel to study such materials without the help of Texas Tech because of the constraints of limited equipment and engineering resources. We propose to change the processing conditions, such as CH4/NF3 flow rates, rf power, bias voltage, pressure and to deposit a-C:H,N,F films with various concentrations of hydrogen, nitrogen and fluorine in our PECVD system. The relationship between the antifuse characteristics and the N, F, H content of the films will be studied extensively for the optimization of the devices. We will also deposit a-SixC1-x, :H using diethysilane and methane. The most promising antifuse structures at Texas Tech will be further tested for reliability at Actel Corporation. Selected structures will be transferred to Actel Corp. for further development and inclusion into the 0.6 micron CMOS process flow. Contingent upon NSF support, Actel Corp. will provide $204,730 matching, which will include $60,000 funding and $144,730 in-kind support, including samples and sample analysis, processing, investigator time and donated equipment. Texas Tech has provided $58,200 as matching funds by granting the PI a sabbatical leave to work at Actel Corporation and by waiving the indirect cost for the $60,000 funding from Actel. *** mm1