Advanced Semiconductor Structures for Next Generation Wireless Systems: Interplay Between Materials and Devices

在该提案项目中，佐治亚理工学院（Georgia Tech）、伊利诺伊大学（UIUC）和TRW将合作，显著推进磷基微波和毫米波器件的生长和制造技术。这项工作的框架是由当前无线通信系统改进的系统驱动程序提供的。这些标准是降低工艺成本，提高效率，线性度和输出功率，最小化偏置电压和电流漏，以及降低噪声。分子束外延（MBE）是应用最广泛的商用微波和毫米波器件的外延生长技术。人们普遍认为，inp基材料为这些目标器件应用提供了显著的优势。然而，为了使这些材料达到足够成熟的制造状态，目前还需要进行重大改进。在“标准”MBE配置（即所有固体源）中利用磷的能力将实现特定的性能和工艺成本改进。我们建议解决这一至关重要的需要。与此目标同步的是MBE作为一种工艺技术的进步。我们将通过进行材料实验并结合基于物理的MBE模型的开发来解决这两个问题。伊利诺伊大学的工作将集中在开发基于inp的hemt的改进工艺技术上。特别是，改进干刻蚀均匀性和改进欧姆接触器件结构和方案的发展将被研究。所选择的工艺问题将使工艺成本和设备性能得到改善。材料表征和器件制造和测量将在TRW进行。天合在这个合作项目中付出了巨大的努力（- 60%的成本分摊）。此外，天合将为参与该项目的学生提供暑期就业机会。* * *

9633535 Brown In this proposal program, The Georgia Institute of Technology (Georgia Tech), The University of Illinois (UIUC), and TRW will collaborate to significantly advance the growth and fabrication technologies for phosphorous-based microwave and millimeter wave devices. The framework for this effort is provided by the current system drivers for improvements in wireless communication systems. These criteria are reduced process cost, improved efficiency, linearity and output power, minimization of bias voltage and current drain, and reduced noise. Molecular Beam Epitaxy (MBE) is the most widely used growth technique for commercial microwave and millimeter wave devices which require epitaxial films. It is widely recognized that InP-based materials offer significant advantages for these targeted device applications. Significant improvements, however, are currently required to advance these materials to an adequate state of maturity for manufacturing. The ability to utilize phosphorus in a "standard' MBE configuration, i.e. all solid sources, will enable specific performance and process cost improvements. We propose to address this vital need. Concurrent with this goal will be the advancement of MBE as a process technology. We will address both of these issues by performing the materials experiments in conjunction with the development of a physically-based MBE model. The effort at The University of Illinois will be focused towards the development of improved process technologies for InP-based HEMTs. In particular, the improvement in dry etching uniformity and the development of improved device structures and schemes for ohmic contacts will be investigated. The process issues chosen will enable improvements in process cost and in device performance. Materials characterization and device fabrication and measurement will be performed at TRW. TRW has committed a significant effort (- 60% cost sharing) towards this collaborative project. In addition, TRW will provide summer e mployment for students working on this project. ***