Selective Area Growth of Semiconductor Structures by MOCVD for Telecommunication Applications

用于电信应用的 MOCVD 半导体结构的选择性区域生长

• 批准号: 543559-2019
• 负责人: Kleiman, Rafael
• 金额: $ 1.82万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=681132
• 关键词: Selective; Area; Growth; Semiconductor; Structures

Photonic integrated circuits (PICs) promise to drive down the cost and increase the performance of the vital components and systems that enable the optical communications network, which forms the backbone of our modern telecommunications system. Just as the integrated circuit did for electronics, PICs reduce the cost by reducing the number of fabrication steps, improving yield and enabling economies of scale through batch fabrication. There are two general approaches to photonic integration; hybrid integration, where devices are separately fabricated and assembled, and monolithic integration, where all devices are fabricated together on a single chip. In hybrid integration, the composite devices are well-optimized; however, the integration of devices is daunting and expensive, due to the need for alignment of devices on a sub-micron scale, and the serious reliability issues that ensue. Monolithic integration for photonic circuits solves the packaging problem by design, but is far more complex than for electronic circuits due to the wide variety of devices to be integrated and the different materials systems that are separately optimized for each device. In particular, modern PICs require components that operate at different wavelengths in order to take advantage of the vast bandwidth afforded by optical fibers, through wavelength division multiplexing (WDM). An elegant approach to fabricating different wavelength lasers on a single chip is selective area growth (SAG), where the composition and thickness of epitaxial III-V semiconductor layers grown by metallo-organic chemical vapor deposition (MOCVD) can be carefully controlled by varying the dimensions of a masking layer. As a result, multiple wavelength lasers can be grown simultaneously on a single chip. In this project, we will develop new SAG processes using the MOCVD at McMaster University to provide single-growth multi-wavelength laser structures to the current photonic integration platform in use by ArtIC Photonics.

光子综合电路（PICS）有望降低成本并提高使光学通信网络的重要组件和系统的性能，该组件和系统构成了我们现代电信系统的骨干。就像集成电路对电子设备所做的那样，图片通过减少制造步骤的数量，提高产量并通过批处理制造来降低规模经济来降低成本。 光子整合有两种一般方法。混合积分，分别制造和组装设备，以及整体整合，所有设备都在单个芯片上组合在一起。 在混合整合中，复合设备进行了良好的优化。但是，由于需要在亚微米尺度上对设备的一致以及随之而来的严重可靠性问题，因此设备的整合令人生畏且昂贵。 光子电路的整体集成可以通过设计解决包装问题，但由于要集成的各种设备以及为每个设备分别优化的不同材料系统，因此比电子电路要复杂得多。 特别是，现代图片需要以不同波长运行的组件，以利用光纤通过波长的多重多路复用（WDM）提供的巨大带宽。 在单个芯片上制造不同波长激光器的一种优雅方法是选择性区域生长（SAG），其中通过金属有机化学蒸气沉积（MOCVD）生长的外延III-V半导体层的成分和厚度可以通过改变掩护层的尺寸来仔细控制。 结果，可以在单个芯片上同时生长多个波长激光器。 在该项目中，我们将使用McMaster University的MOCVD开发新的SAG过程，以向当前的光子光子学使用的当前光子积分平台提供单个生长多波长激光结构。