Selective Area Growth of Semiconductor Structures by MOCVD for Telecommunication Applications

用于电信应用的 MOCVD 半导体结构的选择性区域生长

• 批准号: 543559-2019
• 负责人: Kleiman, Rafael
• 金额: $ 1.82万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=681132
• 关键词: Selective; Area; Growth; Semiconductor; Structures

Photonic integrated circuits (PICs) promise to drive down the cost and increase the performance of the vital components and systems that enable the optical communications network, which forms the backbone of our modern telecommunications system. Just as the integrated circuit did for electronics, PICs reduce the cost by reducing the number of fabrication steps, improving yield and enabling economies of scale through batch fabrication. There are two general approaches to photonic integration; hybrid integration, where devices are separately fabricated and assembled, and monolithic integration, where all devices are fabricated together on a single chip. In hybrid integration, the composite devices are well-optimized; however, the integration of devices is daunting and expensive, due to the need for alignment of devices on a sub-micron scale, and the serious reliability issues that ensue. Monolithic integration for photonic circuits solves the packaging problem by design, but is far more complex than for electronic circuits due to the wide variety of devices to be integrated and the different materials systems that are separately optimized for each device. In particular, modern PICs require components that operate at different wavelengths in order to take advantage of the vast bandwidth afforded by optical fibers, through wavelength division multiplexing (WDM). An elegant approach to fabricating different wavelength lasers on a single chip is selective area growth (SAG), where the composition and thickness of epitaxial III-V semiconductor layers grown by metallo-organic chemical vapor deposition (MOCVD) can be carefully controlled by varying the dimensions of a masking layer. As a result, multiple wavelength lasers can be grown simultaneously on a single chip. In this project, we will develop new SAG processes using the MOCVD at McMaster University to provide single-growth multi-wavelength laser structures to the current photonic integration platform in use by ArtIC Photonics.

光子集成电路 (PIC) 有望降低支持光通信网络的重要组件和系统的成本并提高其性能，光通信网络构成了我们现代电信系统的支柱。正如集成电路对电子产品的作用一样，PIC 通过减少制造步骤、提高产量并通过批量制造实现规模经济来降低成本。 光子集成有两种通用方法：混合集成（其中设备单独制造和组装）和单片集成（其中所有设备都制造在单个芯片上）。 在混合集成中，复合器件得到了很好的优化；然而，由于需要在亚微米尺度上对准器件，以及随之而来的严重可靠性问题，器件的集成是令人畏惧且昂贵的。 光子电路的单片集成通过设计解决了封装问题，但由于要集成的器件种类繁多以及针对每个器件单独优化的不同材料系统，它比电子电路复杂得多。 特别是，现代 PIC 需要在不同波长下运行的组件，以便通过波分复用 (WDM) 充分利用光纤提供的巨大带宽。 在单芯片上制造不同波长激光器的一种优雅方法是选择性区域生长 (SAG)，其中通过金属有机化学气相沉积 (MOCVD) 生长的外延 III-V 半导体层的成分和厚度可以通过改变掩模层的尺寸来仔细控制。 因此，可以在单个芯片上同时生长多个波长的激光器。 在这个项目中，我们将使用麦克马斯特大学的 MOCVD 开发新的 SAG 工艺，为 ArtIC Photonics 当前使用的光子集成平台提供单生长多波长激光结构。