Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions

9633731艾琳这项研究项目由电子材料和固态化学计划共同资助，旨在显著提高对电子回旋共振等离子体沉积介质膜在砷化镓和锗单晶表面的基本理解。薄膜的生长将通过光谱和单波长椭偏测量仪进行现场监测。具体目标包括通过检查从形成的界面衍生的信息管理系统结的I-V行为来研究由沉积产生的半导体-介质界面的电子性质。此外，还将使用各种非原位表征工具，包括XPS、AFM和FTIR，以获得有关沉积过程和基本结构-性质关系的详细信息。一般方法有望为创造环境稳定、无缺陷的Ge和GaAs表面的终端提供新的基本信息和见解。该项目是一个多学科的项目，将基础固态表面和界面化学以及材料科学、合成和加工研究与先进的表征工具和分析方法相结合，以解决具有强烈技术相关性和高潜在回报的热门领域的前沿问题。这项研究将在基础水平上为先进电子/光子器件和集成电路的几个方面贡献基本的材料科学知识。此外，从这项研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9633731 Irene This research project, co-funded by the Electronic Materials and Solid State Chemistry programs, aims for significant advancement in fundamental understanding of ECR plasma deposition of dielectric films on GaAs and Ge single crystal surfaces. Film growth will be monitored in situ by both spectroscopic and single wavelength ellipsometry. Specific goals include investigation of the electronic properties of the semiconductor-dielectric interfaces resulting from the deposition by examining the I-V behavior of MIS junctions derived from the interfaces formed. In addition, a variety of ex-situ characterization tools including XPS, AFM, and FTIR will be employed to gain detailed information on the deposition process and fundamental structure-property relationships. The general approach is expected to provide new fundamental information and insights into the creation of environmentally stable, defect-free terminations of Ge and GaAs surfaces. %%% The project is multidisciplinary combining fundamental solid state surface and interface chemistry and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of strong technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***