Carrier Transport Effects on Compressively Strained InAsP Lasers
Carrier Transport Effects on Compressively Strained InAsP Lasers
批准号:
9803066
负责人:
Carmen Menoni
金额:
$37.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-06-01 至 2003-05-31
中文摘要
9803066 Menoni该项目解决了限制高速光纤通信系统中使用的近红外固态激光器性能的基本材料科学问题。重点研究领域包括错配位错形成和扩展的外延温度依赖性,通过材料组合和MBE参数影响的应变和应变补偿对伪晶生长临界厚度的影响,带偏移和载流子限制。该方法结合了InAsyP1-y/InGaAsP多量子阱结构中材料生长/表征和详细载流子输运测量之间的迭代反馈。将研究应变InAsP激光器结构中的载流子输运机制,并将其与高温激光操作联系起来。测量将包括量子阱载流子捕获和发射速率,以及通过单独约束异质结构的载流子扩散,以评估这些现象如何随注入条件、温度和结构的几何形状而变化。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/光子材料和器件的新领域贡献基础材料科学知识。从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础,从而有助于提高先进设备的性能和稳定性。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。***
英文摘要
9803066 Menoni This project addresses basic materials science issues limiting the performance of near-IR solid state lasers used in high speed fiber optics communications systems. Key areas of study include the epitaxial temperature dependence of misfit dislocation formation and propagation, the influence of strain and strain compensation effected through materials combinations and MBE parameters on critical thicknesses for pseudomorphic growth, band offsets, and carrier confinement. The approach incorporates iterative feedback between materials growth/characterization and detailed carrier transport measurements in InAsyP1-y/InGaAsP multiple quantum well structures. Mechanisms of carrier transport in strained InAsP lasers structures will be studied and related to high temperature laser operation. Measurements will include quantum well carrier capture and emission rates, and carrier diffusion through a separate confinement heterostructure to assess how these phenomena vary with injection conditions, temperature, and geometry of the structures. %%% The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic materials and devices. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
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