Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
批准号:
0070418
负责人:
Antoine Kahn
金额:
$0.6万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-05-15 至 2001-04-30
中文摘要
2000年7月9日至13日在美国普林斯顿大学举行的固体薄膜和表面会议。固体薄膜和表面以及界面是技术上重要的材料和活动的共同特征,包括电子和光电器件以及传感器的制造。本次会议提供了一个论坛,介绍和讨论该领域的最新实验和理论进展。它是一个为期四天的多届会议,全体会议总结了各分领域最近的工作。此外,还组织了特邀讲座、贡献讲座和海报会议。该计划强调的主题:薄膜和表面的结构,电子和光学特性;薄膜生长和相关主题,如外延和粗糙化;有机单层和薄膜;宽带隙半导体表面和界面;纳米结构薄膜;氧化,氧化膜和表面;新的表征技术;太阳能电池薄膜;薄膜和表面的理论。固体薄膜和表面的进展和状态的评估,沿着目前在这一领域的最重要的发展的评估接口将是非常有价值的表面化学的理解和提高利用的电子/光子材料在计算,数据处理和通信。会议由CHE/ASC proram共同支持。 ***
英文摘要
A conference on solid films and surfaces will be held at Princeton University on July 9-13, 2000. Solid films and surfaces, and interfaces are a common feature of technologically important materials and activities, including the fabrication of electronic and optoelectronic devices, and sensors. This conference provides a forum for the presentation and discussion of the latest experimental and theoretical advances in the field. It is organized as a multiple session conference lasting four days, with plenary talks summarizing recent work in various sub-fields. In addition, invited talks, contributed talks and poster sessions are organized. The program emphasizes the topics: Structural, electronic and optical properties of thin films and surfaces; Thin film growth and related topics, such as epitaxy and roughening; Organic monolayers and films; Wide band gap semiconductor surfaces and interfaces; Nanostructured thin films; Oxidation, oxide films and surfaces; New characterization techniques; Thin films for solar cells; Theory of films and surfaces. %%% An evaluation of the progress and status of solid films and surfaces, and interfaces along with current assessments of the most important developments in this field will be of great value to the understanding of surface chemistry and enhanced utilization of electronic/photonic materials in computing, data processing, and communications. The conference is co-supported by the CHE/ASC propram. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Gap State Compensation in Organic Semiconductors: The Ultra-Low Doping Regime
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批准号:1506097
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依托单位:
Status and perspectives for the hybrid organic-inorganic perovskite-based and -inspired systems as future energy materials
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Physics and Applications of Doping in Molecular Semiconductor Films
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批准号:1005892
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依托单位:
Fundamentals and Applications of Organic Interfaces
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批准号:0705920
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资助金额:$41.55万
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财政年份:2007
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负责人:Antoine Kahn
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依托单位:
Energetics and Electronical Doping at Interfaces of Molecular Films
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批准号:0408589
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项目类别:Continuing Grant
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资助金额:$40.29万
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财政年份:2004
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负责人:Antoine Kahn
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依托单位:
Organic Molecular Thin Films: Interface Electronic Properties
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批准号:0097133
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项目类别:Continuing Grant
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资助金额:$37.32万
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财政年份:2001
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负责人:Antoine Kahn
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III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties
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批准号:9618771
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财政年份:1997
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Surfaces and Interfaces of Wide Band Gap Compound Semiconductors
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批准号:9321826
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1994
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals
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批准号:9018521
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项目类别:Continuing Grant
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资助金额:$27.9万
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财政年份:1991
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负责人:Antoine Kahn
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依托单位:
Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope
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批准号:8906530
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项目类别:Standard Grant
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资助金额:$5.35万
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财政年份:1989
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Compound Semiconductor Surfaces and their Interfaces with Metals
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批准号:8709531
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项目类别:Continuing Grant
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资助金额:$31.3万
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财政年份:1987
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负责人:Antoine Kahn
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依托单位:
Industry/University Cooperative Research Activity: Atomic & Electronic Structures at Metal-Semiconductor Interfaces Formed on Polar & Non-Polar Surfaces of III-V Compou
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批准号:8406820
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项目类别:Continuing Grant
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资助金额:$19.37万
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财政年份:1984
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负责人:Antoine Kahn
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依托单位:
Presidential Young Investigator Award: Metal, Insulator andSemiconductor - Semiconductor Interfaces
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批准号:8351822
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项目类别:Continuing Grant
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资助金额:$29.68万
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财政年份:1984
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负责人:Antoine Kahn
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依托单位:
Industry-University Cooperative Research: Structure and Properties of Column Iii Elements Adsorbed on Iii-V CompoundSemiconductors
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资助金额:$8.28万
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财政年份:1982
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负责人:Antoine Kahn
-
依托单位:
海外基金