Gallium Nitride Quantum-Dot Light-Emitting Diodes
Gallium Nitride Quantum-Dot Light-Emitting Diodes
批准号:
0438400
负责人:
Ignatius Tsong
金额:
$60.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-02-15 至 2009-03-31
中文摘要
0438400 TsongThis award is to Arizona州立大学to support the activity described below for 24 months. 该提案是为了响应创新伙伴关系计划征集而提交的(NSF-04556)。合作伙伴合作伙伴包括亚利桑那州州立大学(牵头机构)、桑迪亚国家实验室和Nitronex公司(一家小企业)。该提案的主要目标是研究、技术转让和基于量子点的第三族氮化物宽带隙半导体的发光二极管的商业化。亚利桑那州立大学将在硅衬底上生产锆硼,这种硅衬底与氮化镓发光二极管晶格匹配。该基板在紫外光谱中具有高反射性,这克服了吸收并使激光器高效。Nitronex将在衬底上生长应力释放氮化铝镓过渡层,以防止操作中的热裂纹。亚利桑那州州立大学将随后生长砷化镓量子点,这是发光二极管的光学活性介质。桑迪亚将生长覆盖层和包装元件。桑迪亚还将测量这些设备的光输出效率。 Nitronex将使产品商业化。潜在的经济影响拟议中的创新将创造出高能效、更持久和具有成本效益的照明系统,这将大大有助于减少能源消耗。进一步的可持续创新包括通过磷光体转换的白色发光二极管,以及用于改善光通信和数据存储的激光系统。这将为美国照明行业带来数十亿美元的商机。该项目的智力价值在于利用三家合作伙伴各自的独特能力来发展和表征这种新型发光二极管。该新材料将具有比常规III族氮化物宽带隙发光二极管更高的亮度和发光效率,由于发射线宽更窄,颜色特异性将远远优于上级。该活动的更广泛影响集中在扩展技术以开发新一代光-发光二极管将满足用于一般照明以及改进的光学和数据存储的应用的低成本和高发光效率的标准。学生还将接触到创业的课程和实践经验,即,将知识转化为产品的第一手经验,创造新的财富,并通过减少能源消耗提高生活质量。
英文摘要
0438400TsongThis award is to Arizona State University to support the activity described below for 24 months. The proposal was submitted in response to the Partnerships for Innovation Program Solicitation (NSF-04556).PartnersThe partners include Arizona State University (Lead Institution), Sandia National Laboratories, and Nitronex Corporation (a small business).The primary objective of the proposal is research, technology transfer, and commercialization of light-emitting diodes based on group III nitride wide band-gap semiconductors based on quantum dots. Arizona State University will produce the zirconium-boron on silicon substrates, which are lattice-matched to the gallium nitride light-emitting diodes. The substrates are highly reflective in the ultraviolet spectrum, which overcomes the absorption and makes the laser efficient. Nitronex will grow the stress-relieving aluminum gallium nitride transition layers on the substrate to prevent thermal cracking in operation. Arizona State University will then grow the quantum dots of gallium arsenide, which are the optically active medium for the light-emitting diode. Sandia will grow the capping layer and the packaging elements. Sandia will also measure the efficiency of the light output of the devices. Nitronex will commercialize the products.Potential Economic ImpactThe proposed innovations will create highly energy-efficient, longer-lasting, and cost-effective lighting systems that will contribute significantly to the reduction of energy consumption. Further sustainable innovations include white light-emitting diodes through phosphor conversion, and laser systems for improved optical communications and data storage. This will open business opportunities in the multi-billion dollar range for the US lighting industry.The intellectual merit of the project is the growth and characterization of this new class of light-emitting diodes using the unique capabilities of each of the three partners. The new materials will have higher brightness and luminous efficiency than the conventional group III nitride wide band-gap light-emitting diodes, and the color specificity will be far superior because of the narrower emission line-width.The broader impacts of the activity concentrate on expanding the techniques to develop a new generation of light-emitting diodes will fulfill the criteria of both low cost and high luminous efficiency for applications in general illumination, as well as improved optical and data storage. The students will also be exposed to course and practical experience in entrepreneurship, i.e., first-hand experience in transforming knowledge into products that create new wealth and enhance the quality of life by reducing energy consumption.
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会议论文
Properties of the Pseudo-Binary Wide Band Gap Semiconductor Silicon Carbide-Aluminum Nitride
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批准号:0303237
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项目类别:Continuing Grant
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资助金额:$33.63万
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财政年份:2003
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负责人:Ignatius Tsong
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依托单位:
U.S.-Japan Joint Seminar: Mesoscopic Phenomena on Surfaces
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批准号:9909756
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项目类别:Standard Grant
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资助金额:$1.44万
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财政年份:2000
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负责人:Ignatius Tsong
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依托单位:
Tailoring Surface Morphology in Group III Nitride Heteroepitaxy
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批准号:9986271
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项目类别:Continuing Grant
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资助金额:$30.68万
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财政年份:2000
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负责人:Ignatius Tsong
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依托单位:
NSF-CGP Fellowship: An In situ Scanning Tunneling Micro- scopy Study of Group III Nitride Thin Films
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批准号:9602468
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项目类别:Standard Grant
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资助金额:$12.99万
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财政年份:1997
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负责人:Ignatius Tsong
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依托单位:
Tailoring Surface Morphology of Epitaxial Layers on Silicon
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批准号:9528513
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项目类别:Continuing Grant
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资助金额:$34.95万
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财政年份:1996
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负责人:Ignatius Tsong
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依托单位:
Structures of Surfaces and Interfaces of Metal/SemiconductorSystems
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批准号:9116505
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项目类别:Continuing Grant
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资助金额:$26.04万
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财政年份:1992
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负责人:Ignatius Tsong
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依托单位:
Acquisition of a Low Energy Electron Microscope (LEEM)
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批准号:9112021
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项目类别:Continuing Grant
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资助金额:$50.0万
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财政年份:1991
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负责人:Ignatius Tsong
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依托单位:
Experimental and Theoretical Studies of Ultrathin Overlayerson Semiconductor Surfaces
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批准号:8718101
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项目类别:Continuing Grant
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资助金额:$28.56万
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财政年份:1988
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负责人:Ignatius Tsong
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依托单位:
Development of an Impact Collision Ion Scattering Spectrom- etry and Ion Desorption Spectrometry Instrument for Studies of Surface Structure and Composition (Materials Research)
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批准号:8412232
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项目类别:Continuing Grant
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资助金额:$35.1万
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财政年份:1984
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负责人:Ignatius Tsong
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依托单位:
Sixth International Conference on Ion Beam Analysis, Arizona State University, May 23-27, 1983
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批准号:8215618
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:1983
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负责人:Ignatius Tsong
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依托单位:
The Effect of Hydrogen And/Or Water Content on the Deformation Mechanisms in Olivine
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批准号:7822746
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项目类别:Standard Grant
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资助金额:$6.74万
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财政年份:1979
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负责人:Ignatius Tsong
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依托单位:
Development of a Combined Secondary Ion Mass Spectrometer (Sims)-Ion Beam Spectrochemical Analysis (Ibsca) Instrument
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批准号:7809767
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项目类别:Standard Grant
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资助金额:$8.5万
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财政年份:1979
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负责人:Ignatius Tsong
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依托单位:
国内基金
海外基金
基于稀氮砷化镓(Dilute nitride GaNAs)的近红外自旋放大纳米线激光器的研究
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批准号:61905071
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项目类别:青年科学基金项目
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资助金额:24.0万元
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批准年份:2019
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负责人:陈舒拉
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依托单位: