NER/SNB: High-frequency, three-dimensional integrated CNFET/CMOS technology

提案号：508319标题：NER/SNB：高频、三维集成CNFET/CMOS技术作者：哥伦比亚大学作者：Ken Shepard碳纳米管场效应晶体管（CNFET）已经成为传统深亚微米硅晶体管的潜在替代场效应技术。虽然在类似于互补金属氧化物半导体（CMOS）硅场效应晶体管的物理原理下工作，但这些器件在电路中提供了几个可能的优势，包括减少短通道效应，潜在的分子水平控制以减少可变性，以及混合三维集成，其中有源器件（CMOS在底部，CNFET在顶部）将夹在金属互连层中。为了实现这些潜在的优势，这些器件必须与硅CMOS fet共存，并且必须能够利用现有的CMOS工艺技术投资。通过将与CMOS兼容的CNFET制造与全面的电路聚焦器件特性相结合，pi寻求进一步探索CNFET在实际微电子应用中的潜在优势，同时追求将CNFET晶体管与传统深亚微米CMOS技术相结合的可行电路的开发。

Proposal no: 508319Title: NER/SNB: High-frequency, three-dimensional integrated CNFET/CMOS technologyInst: Columbia UniversityPI: Ken Shepard Carbon nano-tube field-effect transistors (CNFET) have emerged as a potential alternative field-effect technology to conventional deep-submicron silicon transistors. While operating under physical principles similar to complementary metal-oxide semiconductor (CMOS) silicon field-effect transistors, these devices offer several possible advantages in circuits including reduced short-channel effects, potential molecular-level control to reduce variability, and a hybrid three-dimensional integration in which active devices (CMOS on the bottom and CNFET on the top) will sandwich the metal interconnect layers. For any of these potential advantages to be realized, these devices must coexist with silicon CMOS FETs and must be able to leverage the existing investment in CMOS process technology. By combining CMOS-compatible CNFET fabrication with comprehensive circuit-focused device characterization, the PIs seek to further explore the potential advantage of CNFETs for real microelectronics applications while pursuing the development of viable circuits that combine CNFET transistors with conventional deep submicron CMOS technology.