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Modeling Transport in Nanoscale MOSFETs - Meeting The Challenges of Next-Generation Devices

Modeling Transport in Nanoscale MOSFETs - Meeting The Challenges of Next-Generation Devices
纳米级 MOSFET 中的传输建模 - 应对下一代器件的挑战
批准号:
0524655
负责人:
Sokrates Pantelides
金额:
$20.99万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-09-01 至 2008-08-31

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中文摘要
翻译
这项研究的目的是对纳米级金属氧化物半导体结构中的沟道迁移率和栅氧化物隧道效应进行计算,具有完全量子力学的严谨性和原子尺度的细节。这项研究为第一原理量子力学计算的前沿应用开辟了新的领域。迁移率的计算方法是基于密度泛函理论、精确的原子尺度器件结构和一种新的格林函数技术。通过栅电介质的隧道电流将使用最近开发的用于单分子传输的新传输方法来计算。结果将通过与三个实验小组的合作,根据实验数据进行验证,并最终将以适合纳入电路建模的紧凑模型的形式铸造,以便它们能够服务于新兴技术的设计。这项研究确定了在对纳米级器件的传输特性进行建模时需要解决的关键问题,这些器件很可能在未来十年主导纳米电子学。通过与实验研究人员和工程设备建模小组的合作,这些方法将得到验证,并集成到下一代微电子的建模工具中。器件建模使半导体行业能够快速开发和引入新技术,通过降低成本和提高性能造福行业和社会。这项研究促进并依赖于在原子尺度物理和电气工程之间架起桥梁的研究生和本科生的跨学科教育。当地一名高中物理教师将参与这项研究,将结果概括为适合高中和普通公众的模块。
英文摘要
The objective of this research is to pursue calculations of channel mobilities and gate oxide tunneling in nanoscale metal-oxide-semiconductor structures with full quantum-mechanical rigor and atomic-scale detail. This research carves new ground in frontier applications of first-principles quantum mechanical calculations. The approach to mobility calculations is based on Density Functional Theory, accurate atomic-scale device structures, and a novel Green's function technique. Tunneling currents through the gate dielectric will be calculated using novel transport methods developed recently for transport through single molecules. The results will be validated against experimental data through collaborations with three experimental groups and will ultimately be cast in forms that will be suitable for incorporation in compact models for circuit modeling so that they can serve in the design of emerging technologies. This research identifies key issues that need to be addressed for modeling transport properties in nanoscale devices that are likely to dominate nanoelectronics in the next decade. Through a collaboration with experimental researchers and engineering device modeling groups, the methods will be validated and integrated into modeling tools for next-generation microelectronics. Device modeling enables the rapid development and introduction of new technologies in the semiconductor industry, benefiting the industry and society through reduced cost and improved performance. This research promotes and relies upon the cross-disciplinary education of graduate and undergraduate students in areas bridging atomic-scale physics and electrical engineering. A local high school physics teacher will be engaged in the research to encapsulate the results in modules suitable for high schools and the general public.
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Atomic-Scale Modeling of Defect-Mediated Device Degradation
  • 批准号:
    1508898
  • 项目类别:
    Standard Grant
  • 资助金额:
    $38.0万
  • 财政年份:
    2015
  • 负责人:
    Sokrates Pantelides
  • 依托单位:
Multiscale theory of memristive materials systems
  • 批准号:
    1207241
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $31.7万
  • 财政年份:
    2012
  • 负责人:
    Sokrates Pantelides
  • 依托单位:
GOALI/FRG: The Oxidation of Silicon Carbide and Structure-Defects-Mobility Relations
  • 批准号:
    0907385
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $155.64万
  • 财政年份:
    2009
  • 负责人:
    Sokrates Pantelides
  • 依托单位:
Cooperative Atomic Dynamics in Crystalline Cages - From Defect Complexes To Self-assembled Nanostructures
  • 批准号:
    9803768
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $25.2万
  • 财政年份:
    1998
  • 负责人:
    Sokrates Pantelides
  • 依托单位:
国内基金
海外基金
Toward a general theory of intermittent aeolian and fluvial nonsuspended sediment transport
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    55万元
  • 批准年份:
    2022
  • 负责人:
    Thomas Pahtz
  • 依托单位:
Intraflagellar Transport运输纤毛蛋白的分子机理
苜蓿根瘤菌(S.meliloti)四碳二羧酸转运系统 (Dicarboxylate transport system, Dct系统)跨膜信号转导机理
  • 批准号:
    30870030
  • 项目类别:
    面上项目
  • 资助金额:
    30.0万元
  • 批准年份:
    2008
  • 负责人:
    文津
  • 依托单位: