GOALI: Novel Epitaxial Vanadium Oxide Thin Film Heterostructures Integrated with Si(100)

非技术描述：固态器件的前沿取决于在计算机芯片上集成具有新特性和功能的材料。该项目的资助非常及时，因为它专注于发现氧化钒中令人兴奋的电，光和磁特性，更重要的是，将这些特性和功能集成到单晶硅计算机芯片上。这是该领域的一个重要步骤，因为目前的传感器与计算机硬连线，使这些系统体积庞大且速度缓慢。 这种集成允许在单个计算机芯片上制造具有快速感测、操纵和响应功能的新型磁传感器、非易失性存储器设备和新型智能红外传感器。反过来，这使得各种红外，磁性和光学传感器在夜视和测辐射热计应用。技术规格：氧化钒的外延集成是通过主要研究者（PI）的域匹配外延专利范例实现的，其中整数倍的平面在膜-衬底界面上匹配。这种范例用于控制应力和应变，从而更精确地操纵性能。为了克服界面相互作用并保持硅衬底上的单晶生长，Narayan教授使用了新型的插入缓冲层和基于钒氧化物的薄膜异质结构的控制功能。通过脉冲激光辐照、离子辐照和真空退火产生新的电性能和功能，其中激光和离子束可用于以受控方式写入下一代智能固态器件的功能。这项研究涉及与工业界（Kopin Corporation）和国家实验室（橡树岭国家实验室（ORNL））的密切合作和技术转让。ORNL的先进亚埃表征与北卡罗来纳州州立大学（NCSU）的原子尺度表征设施具有很强的互补性。该项目使来自北卡罗来纳州AT州立大学和Shaw大学（都是为少数群体服务的机构）的研究生和本科生能够进行密切的研究合作和培训。在PI的领导下，NCSU通过工程在线网络推出了纳米工程科学硕士（MS）学位，地球仪的学生可以远程完成MS学位。作为该计划的一部分，PI教授一系列课程，学生学习薄膜外延，缺陷控制，加工，表征和建模以及下一代多功能智能设备的最新发展。

NON-TECHNICAL DESCRIPTION: The frontier of solid state devices depends upon the integration of materials with new properties and functionalities on a computer chip. The funding of this project is very timely, as it focuses on the discovery of exciting electrical, optical and magnetic properties in vanadium oxide and, more importantly, on the integration of these properties and functions on a single-crystal silicon computer chip. This is a major step in this field, as present sensors are hardwired with computers, making these systems bulky and slow. This integration allows the fabrication of novel magnetic sensors, nonvolatile memory devices, and novel smart infrared sensors which have rapid sensing, manipulation and response functionalities on a single computer chip. In turn, this enables a variety of infrared, magnetic and optical sensors in night vision and bolometer applications. TECHNICAL DETAILS: The epitaxial integration of vanadium oxide is achieved by the principal investigator's (PI's) patented paradigm of domain matching epitaxy, where integral multiples of planes match across the film-substrate interface. This paradigm is used to control stresses and strains and thereby manipulate the properties more precisely. To overcome interfacial interactions and maintain single-crystal growth on silicon substrate, Prof. Narayan uses novel interposing buffer layers and control functionalities of vanadium oxide based thin film heterostructures. New electrical properties and functionalities are created by pulsed laser irradiation, ion irradiation and vacuum annealing, where laser and ion beams can be used to write functionalities in a controlled way for next-generation smart solid state devices. This research involves close collaboration with and technology transfer to industry (Kopin Corporation) and National Labs (Oak Ridge National Laboratory (ORNL)). Advanced sub-Angstrom characterization at ORNL is quite complementary to the atomic scale characterization facilities at North Carolina State University (NCSU). This project enables close research collaboration and training of graduate and undergraduate students from North Carolina A&T State University and Shaw University (both minority-serving institutions). Under the leadership of the PI, NCSU has launched a Master's of Science (MS) degree in Nanoengineering through the Engineering Online network, where students around the globe can complete MS degrees at a distance. As a part of this program, the PI teaches a series of courses where students learn the latest developments in thin film epitaxy, defect control, processing, characterization and modeling and next-generation multifunctional smart devices.