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MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region

MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region
MRI:为纽约西部地区采购超高性能电子束光刻系统
批准号:
1919798
负责人:
Uttam Singisetti
金额:
$100.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-09-01 至 2021-08-31

项目摘要

项目成果

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中文摘要
翻译
这个主要的研究仪器项目是为了获得一个高性能的电子束光刻系统,用于纽约西部地区的研究、教育和更广泛的影响。该系统使用超窄的高能电子束(1.8纳米宽)来定义数十纳米尺度的特征。这种先进的纳米制造工具的独特能力将使在跨越工程、物理、化学、材料科学和生物的广泛领域进行关键研究成为可能。这一最先进的工具将安装在布法罗大学,为该地区的大量学生、教师、研究人员和企业家提供现场和远程访问。该工具的独特功能是能够在大面积上以快速的写入速度定义10 nm以下的维度结构。这一功能对于电子和光子学的前沿研究非常重要。其目的是将在学术实验室中获得的基本知识迅速转化为现实世界的应用。该工具的另一个特点是能够在柔性衬底上定义对生物医学应用至关重要的纳米结构。工程和科学学科的本科生和研究生将可以使用该工具。他们将通过布法罗大学电气工程系提供的课程和项目接受使用培训。该工具将使计算、通信、医疗保健和教育领域的尖端研究成为可能。为本科生和研究生提供的研究机会将有助于培养未来劳动力的技能,以适应知识经济,并保持美国的经济竞争力。该工具将改善纽约西部地区的研究基础设施,并对该地区的经济产生积极影响。远程访问功能将使学生能够在任何地点提交他们的设计以进行制造。该仪器还将为工程学和应用科学的强大推广计划做出贡献。研究人员将为科学和工程领域中代表性不足的学生提供指导。电子束光刻是电子学、光子学、物理学和材料科学高级研究不可或缺的工具。该工具将有助于广泛的主题的研究:用于能源效率数据密集型计算的低功耗非挥发性高速铁电和磁电逻辑和存储器件;新兴的低功率和高效率量子器件;基于二维(2D)材料的纳米电子学;基于宽带隙半导体的高功率灵活电子学;基于III-V半导体中光学声子与石墨烯等离子体结构耦合的室温THz器件;了解相关电子系统的基础物理;用于化学和生物传感的THz等离子体结构;用于THz通信的石墨烯等离子体阵列;以及2D材料、异质界面和器件的表征。这些高影响力的研究具有广泛的应用,从计算、通信、能源和健康。它还将有助于理解相关材料的基本物理和具有重要技术意义的反铁磁氧化物的开关动力学。拟获得的工具将具有高加速电压、低于10 nm的光刻分辨率、高光束位置分辨率、低于20 nm的拼接和覆盖精度、用于高通量写入的可调视场尺寸高达3000微米,以及用于在柔性衬底上写入的高度校正功能。这些独特的特征对开展拟议的研究至关重要。这一奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
This major research instrumentation project is to acquire a high-performance Electron Beam Lithography system for research, education and broader impact in the Western New York region. The system uses an ultra-narrow beam of high energy electrons (1.8 nm wide) to define features on the scale of tens of nanometers. The unique capabilities of this advanced nanofabrication tool will enable crucial research in a broad range of fields spanning engineering, physics, chemistry, materials science and biology. The state-of-the-art tool will be installed at the University at Buffalo and provide both onsite and remote access to a large number of students, faculty, researchers and entrepreneurs across the region. The unique feature of the tool is the ability to define sub-10 nm dimension structures with fast writing speed over large areas. This feature is very important for cutting edge research in electronics and photonics. The aim is to rapidly translate the fundamental knowledge gained in academic laboratories to real world applications. Another feature of the tool is the ability to define nm structures on flexible substrates that are essential for biomedical applications. Undergraduate and graduate students in the engineering and science disciplines will have access to the tool. They will be trained in its use through courses and programs offered by the electrical engineering department at the University at Buffalo. The tool will enable cutting-edge research across computing, communications, healthcare, and education. The research opportunity given to undergraduate and graduate students will help build the skills of the future workforce for knowledge-based economy and maintain the economic competitiveness of the US. The tool will improve the research infrastructure in the western New York region and positively impact the economy of the region. The remote access feature will enable students to submit their designs for fabrication from any location. The instrument will also contribute to strong outreach programs in engineering and applied sciences. Investigators will provide mentorship to underrepresented students in science and engineering.Electron beam lithography is an indispensable tool for advanced research in electronics, photonics, physics, and materials science. The tool will enable research in a broad range of topics: low power non-volatile high speed ferroelectric and magneto-electric based logic and memory devices for energy efficient data intensive computing applications; emerging low power and efficient quantum devices; nano-electronics based on two-dimensional (2D) materials; high power flexible electronics based on widebandgap semiconductors; room temperature THz devices based on coupling of optical phonons in III-V semiconductors to graphene plasmonic structures; understanding of the fundamental physics in correlated electron systems; THz plasmonic structures for chemical and biological sensing; graphene plasmonic array for THz communication; and characterization of 2D materials, heterointerfaces, and devices. These high impact research have applications that range from computing, communication, energy and health. It will also help in understanding fundamental physics in correlated materials and the switching dynamics in technologically important antiferromagnetic oxides. The proposed tool to be acquired will have large acceleration voltage, sub-10nm lithographic resolution, high beam position resolution, sub-20 nm stitching and overlay accuracy, tunable field size up to 3000 micrometers for high throughput writing, and height correction feature for writing on flexible substrates. These unique features are essential to carry out the proposed research.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
Temperature dependent pulsed IV and RF characterization of β -(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 hetero-structure FET with ex situ passivation
采用异位钝化的 β -(Al x Ga 1âx ) 2 O 3 /Ga 2 O 3 异质结构 FET 的温度相关脉冲 IV 和 RF 特性
DOI: 10.1063/5.0083657
发表时间: 2022
期刊: Applied Physics Letters
影响因子: 4
作者: [Saha, Chinmoy Nath, Vaidya, Abhishek, Singisetti, Uttam]
通讯作者: Singisetti, Uttam
Schottky diode characteristics on high-growth rate LPCVD β -Ga 2 O 3 films on (010) and (001) Ga 2 O 3 substrates
(010) 和 (001) Ga 2 O 3 基板上高生长速率 LPCVD β -Ga 2 O 3 薄膜上的肖特基二极管特性
DOI: 10.1063/5.0083659
发表时间: 2022
期刊: Applied Physics Letters
影响因子: 4
作者: [Saha, Sudipto, Meng, Lingyu, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Zhao, Hongping, Singisetti, Uttam]
通讯作者: Singisetti, Uttam
Conference: 6th US Gallium Oxide Workshop
  • 批准号:
    2324760
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.4万
  • 财政年份:
    2023
  • 负责人:
    Uttam Singisetti
  • 依托单位:
MRI: Acquisition of Magento-optical-high-frequency cryogen free probe station for research and education
  • 批准号:
    2215937
  • 项目类别:
    Standard Grant
  • 资助金额:
    $24.27万
  • 财政年份:
    2022
  • 负责人:
    Uttam Singisetti
  • 依托单位:
ASCENT: Enabling efficient high power grid applications by high voltage rating ultrawidebandgap transistors
  • 批准号:
    2231026
  • 项目类别:
    Standard Grant
  • 资助金额:
    $150.0万
  • 财政年份:
    2022
  • 负责人:
    Uttam Singisetti
  • 依托单位:
Collaborative Research: Beta-Ga2O3 high voltage power MOSFETs using metal-organic chemical vapor deposition
  • 批准号:
    2019749
  • 项目类别:
    Standard Grant
  • 资助金额:
    $27.3万
  • 财政年份:
    2020
  • 负责人:
    Uttam Singisetti
  • 依托单位:
海外基金