Development of Sputtering Type Large Current Ion Source and its Application for the Synthesis of Superconducting Oxide thin Films.

在本研究中，开发了可用于离子束沉积的大电流溅射型离子源，并尝试使用该离子源合成诸如超导YBaCuO膜的薄膜。为了增加离子密度和使用较厚的靶，使用位于靶中心的大的单个提取孔而不是多孔栅格来将高密度等离子体提取到沉积室。其结果是，离子密度增加了几倍，相比，多孔提取栅极。此外，通过使用永磁体代替磁性线圈，实现了等离子体源的尺寸的显著减小。本文研究了氮化铁薄膜、Co-Cr薄膜和Y-Ba-Cu-O超导薄膜的制备方法，并对它们在等离子体源中的应用进行了初步探讨。 ...更多信息 已经尝试通过使用上述等离子体源来形成氧化物膜。在合成irm氮化物薄膜时，很明显，薄膜中的晶体生长被动能和离子量的增加显著抑制。因此，该膜具有良好的软磁性能，这对于薄膜磁记录头是有用的。在Co-Cr薄膜的沉积过程中，薄膜中的晶体生长被完全抑制，因此所有的薄膜都具有非晶态结构。在YBaCuO薄膜的合成中，薄膜的成分从靶材的成分改变，并且没有获得具有化学计量成分的薄膜。为了阐明成分变化的机理，提出了一种新的小靶高速对靶溅射方法，并利用该溅射系统研究了溅射粒子在成分中的角分布。其结果，可知溅射粒子的成分随着溅射粒子的射出角而显著地变化。因此，为了获得化学计量成分的薄膜，应该考虑这种角分布。少

In this research, a large current sputtering type ion source which can be used for the ion beam deposition has been developed, and the synthesis of thin films such as the superconducting YBaCuO film has been attempted by using the ion source.In order to increase the ion density and to use a thicker target, a large single extraction hole which was located at the center of the target instead of a multi-hole grid was used to extract the high density plasma to the deposition chamber. As the result, ion density was increased in several times compared to that for multi-hole extraction grid. Besides, a remarkable reduction in the size of the plasma source was achieved by using a permanent magnet in place of a magnetic coil. However, a thermal electron emission source or rf electrode in the plasma source was not so effective to redeuce the working gas pressure and to produce a high density plasma.In this work, synthesis of iron nitride 'thin films, Co-Cr thin films and Y-Ba-Cu-O superconductin … More g oxide films have been attempted by using the above mentioned plasma source. In the synthesis of the irm nitride films, it became clear that the crystal growth in the film was remarkably suppressed by the increase of both kinetic energy and amount of ions. Consequently, the film has the good soft magnetic properties which are useful for thin film magnetic recording head. In the deposition of Co-Cr films, the crystal growth in the film was completely suppressed so that all of the films had amorphous-like structure. In the synthesis of the YBaCuO films, the composition of the film changes from that of the target material, and the film with stoichiometric composition was not obtained. In order to clarify the mechanism of the changes in the composition, a new high rate facing targets sputtering method for the sputtering of a small target was developed, and the angular distribution in the composit ion of sputtered partiles was investigated by using this sputtering system. As the result, it became clear that the composition of the sputtered particles is changed significantly with the emission angle of the sputtered particles. Therefore, this angular distribution should be taken into acount to obtain the film with a stoichiometric composition. Less