Development of Negative-Ion-Beam Techniques for Film Formation and Crystallinity Control

在这个研究项目中，两个开发的负离子束设备的应用程序，以及电影形成和水晶球控制的负离子束技术也是由使用这些设备开发的。由于在这个项目中的感染，获得了许多重要的结果：一个负离子束沉积系统是由一个高当前重负离子源（NIABNIS）组合构建的，其中一个已经由作者、一个大规模分离器和一个新设计的衰减电极和透镜系统开发的。沉积系统可以提供一个足够的负离子数量，具有明显的低能量控制，准确地用于电影制作。CarManagement films were prepared with a mass-separated pure C^- or C2^- ion beam at various beam energy for investigating properties of the film。碳膜的特性，如光学带间隙、电抵抗力、原子强度和热作用，取决于负离子束能量和离子物种。 ... More 这些依赖性被认为是从能量密度中产生的。将其存放在离子束上的一个局部区域，以及从它上的置换可能性，或从一个绑定状态（电子配置）的ofion物种中。在另一边，一个负离子种植者也是结构化的。根据使用这个植入器，基本性质如离子投影范围和分布的植入原子用于负离子植入被确认为可以被LSS的理论预测为一个常规的位置离子植入。然后，C^-离子束被调查形成的植入层的晶体管。在925 ° C至20分钟后， BETA-SiC键在层中形成。重负离子束的电子检测交叉部分被调查为负离子与气体粒子的相互作用。这种现象对于纯物理学来说是基本的和重要的，而这些信息对于技术也是重要的，并且需要设计负离子束的设备。Less（低）

In this research project, two application apparatuses of negative ion beam were developed, and negative-ion-beam techniques for film formation and crystallinity control were also developed by using these apparatuses. From invesigation in this project, many important results were obtained.A negative ion beam deposition system has been constructed by combination of a high-current heavy negative ion source (NIABNIS), which was already developed by the authors, a mass-separator, and a newly designed deceleration electrode and lens system. Thw deposition system could deliver a sufficient amount of negative ions with a quite low energy controlled precisely for film formation. Carbon films were prepared with a mass-separated pure C^- or C2^- ion beam at various beam energy for investigating properties of the film. The properties of carbon films, such as optical band gap, electrical resistivity, atomic adensity, and thermal conductivity, depend upon a negative-ion-beam energy and ion species. … More These dependencies were considered to result from an energy density. which is deposited to a local area of a substrate by ion beam, and from a displacement probability of the film by it, or from a binding state (electron configuration) ofion species.On the other hand, a negative ion implanter was also constructed. By using this implanter, fundamental properties such as ion projection range and distribution of implanted atoms for nagative ion implantation were confirmed to be predicted with the LSS's theory as well as for a conventional positive ion implantation. Then, a crystallinity of implanted layer formed by C^- ion beam was investigated. After annealing the layer at 925゜C during 20 minutes, BETA-SiC bond was formed in the layer.Electron detachment cross sections for heavy negative ion beams were investigated as an interaction of negative ions with gas particles. This phenomenon is fundamental and important for pure physics, and such information is also important for technology and is required for designing an apparatus of negative ion beam. Less