Optimization of Kinetic Energy of Ablated Particles for (InGa)N PLDs

在本研究计划中，我们进行了激光烧蚀Ga粒子的能量控制的实验工作，用于GaN，（InGa）N和（AlGa）N薄膜的生长。迄今为止，这方面的研究主要集中在CVD和MBE两个方面。关于激光烧蚀的报道很少。近年来，人们对激光烧蚀GaN系统的认识越来越高，我们首次获得了ArF准分子激光从熔融镓靶上烧蚀Ga粒子的动能。能量值高达30 eV。我们的建议，以抑制这个能量值是斜入射的激光束和N2环境压力作为散射工作。通过这些方案，我们获得了飞行Ga粒子的能量操纵。除了GaN二元体系外，我们还得到了InGaN和AlGaN三元体系，它们的禁带宽度分别比GaN窄和宽。为此，我们构建了双激光束发射，效果非常好。

In this research project, we carried out the experimental work on the energy manipulation of the laser-ablated Ga particles for GaN, (InGa)N and (AlGa)N thin film growth. So far, most of works in this field have been done CVD and MBE. Very few reports on the laser ablation we can have. Recently, request to knowledge on the laser ablation of GaN system has been increasing.We obtained for the first time the kinetic energy of Ga particles ablated from the molten gallium target by ArF excimer laser irradiation. The energy value was as high as 30 eV. Our proposal to suppress this energy value was the oblique incidence of the laser beam and N2 ambient pressure working as the scatter. Through these proposals, we obtained energy manipulation of flying Ga particles. Very much brilliant PL emission was achieved by this manner.In addition to GaN binary system, we did obtained InGaN and AlGaN ternary systems which had narrower and wider bandgap energies as compared with GaN, respectively. For this purpose, a dual laser beam shot was built, working quite well.