A BASIC STUDY ON METAL CMP MECHANISM AND A TRIAL FOR PRODUCING CMP SLURRY BY SOL-GEL METHOD

今天，计算机的迅速普及给我们的生活带来了信息社会的巨大变化，而计算机与高度集成的集成电路和大规模集成电路有关。集成电路和大规模集成电路的生产依赖于微精密加工技术的发展。化学机械抛光（CMP）是在硅片上采用大马士革法生产集成电路和大规模集成电路多层电路所必需的典型技术，其中每个电路层的表面必须完全光滑。CMP在生产过程中所要求的表面平整度现在将小于100 Å。本研究首先在实验室进行了溶胶-凝胶法制备CMP用硅溶胶浆料的试验。因此，用于实验的浆料的组成是清楚的。然后，用试验料浆对玻璃材料进行抛光实验，研究了不同抛光条件下（pH、粒度、颗粒料浆密度、垫料等）的去除率、表面粗糙度、抛光力矩等抛光性能，并比较了市场上添加未知添加剂的料浆的抛光性能。因此，我们建立了CMP机理模型，并证明了实验中得到的一些抛光性能可以用CMP机理模型来解释。在上述结果的基础上，我们进行了Metal CMP实验，并讨论了Metal CMP机理。最后，我们得出结论，硅CMP和金属CMP之间存在相似之处，尽管这是一个复杂的现象。

Today, the drastic change of our life to the information society has been brought by the rapid popularization of computers, which are associated with highly integrated IC and LSI. The production of IC and LSI depends upon the development of micro-precision processing technologies. Chemical Mechanical Polishing(CMP) is the typical technology necessary for producing multi-layer circuits of IC and LSI by the damascene method on a silicon wafer, where the surface of each circuit layer must be made to be perfectly smooth. The required flatness for the surface finished by CMP in production process would be now less than 100 Å.In this study, first of all, production of colloidal silica slurry for CMP by sol-gel method was conducted in trial in our laboratory. Therefore, constitutions of the slurry used for the experiment are known clearly. Then, polishing experiments for glass materials were carried out with the trial slurry and its polishing properties such as stock removal, surface roughness, polishing torque, etc. were investigated under various polishing conditions (i.e., pH, grain size, slurry density of grains, pad material, etc.), comparing polishing properties of marketed slurries which include some unknown additives. As a result, we formulate a CMP mechanism model and it was proved that some polishing properties obtained in the experiments could be explained by the CMP mechanism modelOn the basis of the results obtained above, we conducted Metal CMP experiments and discussed Metal CMP mechanism. Finally, we get to a conclusion that there exists a similarity between Si CMP and Metal CMP, though it is complicated phenomena.