Study on the method for the measurements of both emissivity and temperature of semiconductor materials.

本研究包括研制混合型表面温度计的可行性研究及发射率不变条件的适用性研究。1.试制的混合式表面温度计在700 K附近的系统误差精度为-5 K，随机误差精度为±1 K。还研制了一种可在真空中测量小面积（1 mmΦ）的光纤棒混合型表面温度计。2.在室温附近对硅片有效的发射率不变条件在高温下不一定成立。3.提出了一种新的室温附近含氧化膜（SiO_2）的半透明硅片的辐射测温方法，采用布鲁斯特角为55.2°，波长为4.7 μm的p偏振辐射。在该方法中，在测量系统中引入两个黑体;一个用于晶片的反射率测量，另一个用于提供穿过半透明晶片的后侧的恒定辐射。利用硅片光学特性的模拟模型，找出了在某些特定条件下p、s偏振辐射率之比与发射率之间的一一对应关系，这在超过900 K的较高温度下得到实验证实，此时硅晶片变得不透明。在此基础上，提出了一种新的辐射测温技术，该技术可以在0.9 μm波长和中等高温下测量硅片的温度和光谱发射率，而不受氧化膜厚度对发射率的影响

This research includes the feasibility study on the development of a hybrid type surface thermometer and the availability of emissivity-invariant condition. The research results are summarized as follows.1.The accuracy of a hybrid-type surface thermometer that has been manufactured by way of trial is -5 K in systematic errors and ±1 K in random errors near 700 K. A hybrid-type surface thermometer comprised of a fiber rod that can measure a small area (1 mmΦ)) in vacuum also has been manufactured.2.The emissivity-invariant condition that is valid near room temperature for silicon wafers is not necessarily available at high temperature. The investigation on the phenomenon should be carried out from now.3.New radiation thermometry for semitransparent silicon wafers with the oxide film (SiO_2) near room temperature has been proposed using Brewster angle at 55.2° and p-polarized radiance at a wavelength of 4.7 μm. In this method, two blackbodies are introduced in the measurement system ; the one is used for reflectivity measurement of wafers and the other is used for providing constant radiance that comes through the rear side of the semitransparent wafer. The emissivity of the specimen is calculated by the reflectivity and transmissivity, thus the temperature of the sample can be obtained.4.By using the simulation model for estimating the optical properties of silicon wafers, a one-to-one relation between a ratio of p- and s-polarized radiances and an emissivity at some specific conditions was found out, which was experimentally confirmed at higher temperature over 900 K where the silicon wafer became opaque. Based on these results, new radiation thermometry that can measure the temperature and spectral emissivity of silicon wafers at a wavelength of 0.9 μm and at moderately high temperature irrespective of the emissivity change due to the oxide film thickness was proposed