Development and Application of Growth Methods of Functional Thin Films.
Development and Application of Growth Methods of Functional Thin Films.
批准号:
63302021
负责人:
YASUDA Yukio
金额:
$7.23万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Co-operative Research (A)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1989
中文摘要
本研究的目的是通过研究功能材料和薄膜生长方法的研究人员之间的技术和跨学科交流,研究新的功能薄膜和开发薄膜生长方法。在这一时期的研究中,各个研究领域都发展出了各种功能薄膜和生长方法。可以说,通过与其他领域研究人员的密切合作,我们的研究达到了最初的目的。(1)气体源分子束外延在这一时期得到了极大的发展,形成了高质量的极薄薄膜,并使薄膜生长的精确控制成为可能。(2)通过使用激发过程,已经形成了新的功能性薄膜,例如金刚石和金属-有机材料的复合膜以及不能通过常规方法形成的薄膜。此外,高温超导薄膜的低温生长也获得了成功。(3)原子层水平的生长控制技术导致了界面和表面固态物理的发展。(4)开展了金刚石膜在半导体中的应用、金属有机材料与绝缘体半导体复合膜的物性等作为功能性薄膜的可能性的研究,掌握了薄膜生长方法与基体形式的功能性材料的关系。这一事实导致了增长方法的有效应用,并明确了该领域仍然是一个未知的科学领域。因此,我们可以期待在这一领域的材料和生长方法的发展,因为未知的领域被认为具有潜在的可能性。
英文摘要
The purpose of this study is to research new functional thin films and to develop thin film growth methods through a technological and interdisciplinary interchange among the researchers which investigate functional materials and thin film growth methods. In this period of study, various functional thin films and growth methods have been developed in each research field attracted attention now. It can be said that our original purpose has been achieved by the study in closer cooperation with researchers in other fields. A part of concrete results is as follows: (1) Gas source molecular beam epitaxy has been drastically extended in this period, and formation of very thin films of high quality and precise control of film growth has been made possible. (2) By using excited processes, new functional thin films such as diamond and composite films of metal-organic material and thin films which cannot be formed by a conventional method have been formed. In addition, the low temperature growth of high-T_c superconducting thin films has been also successful. (3) The growth control technology at atomic layer level has lead to development of solid state physics at interfaces and surfaces. (4) The study including a possibility as functional thin films, such as an application of diamond films to semiconductors and physical properties of composite films of metal-organic material and insulator semiconductor, has been developed.We have been able to grasp the relation between thin film growth methods and functional materials in the form of a matrix. This fact leads to the effective application of growth methods and makes clear the field remaining as an unknown domain of science. Therefore, we can expect the development of material and growth methods in this domain, because the unknown domain is considered to have a potential possibility.
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T.Ohmi, H.Iwabuchi, T.Shibata, and T.Ichikawa: "Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett. 54 PP. 253-255 (1989).
T.Ohmi、H.Iwabuchi、T.Shibata 和 T.Ichikawa:“低动能粒子工艺形成的外延硅薄膜的电特性”Appl.Phys.Lett。
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通讯作者:
T.Ohmi,T.Ichikawa,T.Shibata and H.Iwabuchi: "Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett.54. 523-525 (1989)
T.Ohmi、T.Ichikawa、T.Shibata 和 H.Iwabuchi:“低动能粒子工艺形成的外延硅薄膜的晶体结构分析”Appl.Phys.Lett.54。
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T.Saito,T.Ohmi,T.Shibata,M.Otsuki,and T.Nitta: "Thermal Stability Studies on Copper Thin Films Formed by a Low-Kinetic-Energy Particle Process" 21st Conf.Solid State Devices and Materials. 25-28 (1989)
T.Saito、T.Ohmi、T.Shibata、M.Otsuki 和 T.Nitta:“低动能粒子工艺形成的铜薄膜的热稳定性研究”第 21 届固态器件和材料会议。
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S.Baba,N.Kurosaki,and A.Kinbara: "ISLAND STRUCTURE AND FRICTIONAL PROPERTIES OF SPUTTERED LEAD THIN FILMS" Sino-Japanese Symposium on Dry Processing for Functional Surface Modification. 74-79
S.Baba,N.Kurosaki,A.Kinbara:“溅射铅薄膜的岛结构和摩擦特性”中日功能性表面改性干法研讨会。
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T.Kaneko,H.Asahi,Y.Okuno,T.W.Kang,and S.Gonda: "Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE" Second Intl.Conf.on Chemical Beam Epitaxy and Related Growth Techniques(Including MOMBE,GSMBE and LP-MOVPE)MP2 Housto
T.Kaneko、H.Asahi、Y.Okuno、T.W.Kang 和 S.Gonda:“MOMBE 对 GaSb 和 InAs 生长过程中 RHEED 强度振荡的观察”第二届化学束外延及相关生长技术国际会议(
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