Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions
Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions
批准号:
02555145
负责人:
SUGIMOTO Katsuhisa
金额:
$2.94万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
研制了一种以掺氢TiO_2单晶为材料的半导体pH传感器,用于高温水溶液的pH测量。该传感器的pH响应基于半导体电极的平带电位E_<fb>的pH依赖性变化。E_<fb>可以通过测量溶液中半导体电极上的Mott-Schottky图得到。在298 ~ 523k的温度范围内,对不同掺杂水平的nb_2o_5掺杂TiO_2单晶电极在不同组成和pH的溶液中进行了测量。结果表明,在10Hz频率下,0.01质量% nb_2o_5掺杂电极测得的曲线在所有实验条件下都具有良好的线性关系,E_<fb>值与溶液pH的关系与Nernstian斜率(-2.303RT/F)呈直线关系。该电极可以测量温度高达523K的纯水的pH值。该传感器的pH响应快速、稳定,不受溶液中氧化还原系统的影响。然而,在较高的K^+和Na^+浓度下,观察到干扰效应。
英文摘要
A semiconductor pH sensor using a Bh-doped TiO_2 single crystal has been developed for pH measurement in high temperature aqueous solutions. The pH response of this sensor is based on the pH-dependent change in the flatband potential, E_<fb>, of semiconductor electrode. The value of E_<fb> can be obtained by measuring the Mott-Schottky plot on the semiconductor electrode in a solution. The measurement of the plots has been done on the Nb_2O_5-doped TiO_2 single crystal electrodes with different doping levels in solutions having various composition and pH's at temperatures in the range 298-523K. It was found that the plots measured using the 0.01mass% Nb_2O_5-doped electrode at a frequency of 10Hz had good linearity under all experimental conditions used and the relationships between the values of E_<fb> and the solution pH's showed straight lines with the Nernstian slopes (-2.303RT/F). The pH of pure water at temperatures up to 523K could be measured by this electrode. The pH response of the sensor was fast, stable and not affected by redox systems in the solutions. Interfering effects were observed, however, at higher K^+ and Na^+ concentrations.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
Nobuyoshi Hara: "A Nb-doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions" J. Electrochem. Soc.137. 2517-2523 (1990)
Nobuyoshi Hara:“一种用于高温水溶液的掺铌 TiO_2 半导体 pH 传感器”J. Electrochem。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
Katsuhisa Sugimoto: "Semiconductor pH Sensor" Bull. Japan Inst. Metals. 29. 633-636 (1990)
Katsuhisa Sugimoto:“半导体 pH 传感器”公牛。
DOI:
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发表时间:
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作者:
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通讯作者:
杉本 克久: "半導体電極型pHセンサ-" 日本金属学会会報. 29. 633-636 (1990)
Katsuhisa Sugimoto:“半导体电极型 pH 传感器”日本金属研究所公告 29. 633-636 (1990)。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
Development of Low-Alloy Steel for High Level Radioactive Waste Disposal Container
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批准号:12450287
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.28万
-
财政年份:2000
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负责人:SUGIMOTO Katsuhisa
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依托单位:
Development of a Dynamic Imaging Spectroscopic Ellipsometer Equipped with a CCD Image Sensor
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批准号:10555238
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Analysis of Mechanism of Reactive Ion Etching by Real-time Spectroscopic Ellipsometry
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依托单位:
Development of Multichannel Spectroscopic and Macroscopic Ellipsometer
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批准号:07555510
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$0.64万
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财政年份:1995
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依托单位:
Quantitative Evaluation of Pinehole Defects in Corrosion-Resistant Thin Films Prepared by Dry Coating Process
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资助金额:$2.69万
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财政年份:1994
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依托单位:
Synthesis of Artificial Passivation Films by MOCVD
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批准号:05453086
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财政年份:1993
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依托单位:
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
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依托单位:
Microscopic Ellipsometric Analysis of Thin Films Formed by Chemical Vapor Deposition
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批准号:02650505
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1990
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负责人:SUGIMOTO Katsuhisa
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依托单位:
海外基金