Basic research on semiconductor materials and devices
Basic research on semiconductor materials and devices
批准号:
04045023
负责人:
FURUYA Kazuhito
金额:
$3.46万
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1994
中文摘要
从1994年6月22日到6月26日,我们邀请了两名来自韩国的研究人员来到东京工业大学。在东京工业大学的超快电子研究大楼,来自韩国和日本的研究人员举行了会议,讨论超快电子、光电子学和先进工艺技术。在日本期间,韩国和日本的研究人员参加了固态器件和材料会议,讨论了最新的研究课题和趋势以及我们研究合作的方向。1994年11月24日至11月27日,一名研究人员从东京工业大学访问了韩国全北大学半导体物理研究中心,在韩国半导体物理研讨会上作了特邀演讲。来自日本和韩国的研究人员就量子效应物理和设备应用进行了讨论。1995年1月26日至27日,来自全北大学的两名韩国研究人员访问了东京工业大学,就量子效应物理及其器件应用进行了讨论。日本一位研究人员介绍了1995年6月在东京工业大学新成立的量子效应电子学研究中心的系统,基于上述国际研究活动,我们开始在半导体物理、材料及其器件应用的研究方面进行合作。
英文摘要
From 22 June 1994 to 26 June, we invited two researchers from Korea to Tokyo Institute of Technology. At Ultrafast Electronics Research Building in Tokyo Institute of Technology, researchers from Korea and Japan had meetings to discuss on the ultrafast electronics, the optoelectronics, and the advanced process techniques. During their stay in Japan, Korean and Japanese researchers attended the Solid State Devices and Materials Conference to discuss on latest research topics and trend and the direction of our research cooperation.From 24 November 1994 to 27 November, one researcher visited the Semiconductor Physics Research Center of Jeonbuk University in Korea from Tokyo Institute of Technology to present an invited talk at the Symposium of Semiconductor Physics on Korea. Researchers from Japan and Korea discussed on quantum effect physics and device application. He also visited research facilities in the Center.From 26 January 1995 to 27 January, two Korean researchers visited Tokyo Institute of Technology from Jeonbuk University to discuss on quantum effect physics and its device application. Japanese researcher explained about the system of the Quantum Effect Electronics Research Center newly opened in June 1995 at Tokyo Institute of Technology.Owing to the above international activity on the research, we have started to cooperate on the research of semiconductor physics, materials and its device applications.
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Kenichi Iga: "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanal MOCVD" Electron.,Lett.30. 1947-1948 (1994)
Kenichi Iga:“通过非平面 MOCVD 制造的二维多波长表面发射激光阵列”Electron.,Lett.30。
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Hyung-Jae Lee: "Formation mechanism and pore size control of light emitting porous silicon" Jpn.J.Appl.Phys.33. 6425- (1994)
Hyung-Jae Lee:“发光多孔硅的形成机制和孔径控制”Jpn.J.Appl.Phys.33。
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Jae-Myung Seo: "Existence of metastable molecular precursors to dissociative oxygen chemisorption Si(111) and Si (100) at 40 K" J.of Vac.Sci.& Tech.A. 12. 2255- (1994)
Jae-Myung Seo:“40 K 下解离氧化学吸附 Si(111) 和 Si (100) 的亚稳态分子前体的存在”J.of Vac.Sci。
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Hyung-Jae Lee: "Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temparature gradient vapor transport depositon" Appl.Phys.Lett.65. 2597-2599 (1994)
Hyung-Jae Lee:“通过温度梯度气相传输沉积生长的 CdTe/InSb 异质界面的界面层形成”Appl.Phys.Lett.65。
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Kazuhito Furuya: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)
Kazuhito Furuya:“使用相关函数分析谐振隧道二极管的断相效应”Jpn.J.Appl.Phys.33。
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共 38 条
Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle
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批准号:15360184
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.83万
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财政年份:2003
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负责人:FURUYA Kazuhito
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依托单位:
Quantum Interference Devices Controlled by Metals Buried in Semiconductors
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批准号:11694136
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.33万
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财政年份:1999
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负责人:FURUYA Kazuhito
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依托单位:
Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy
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批准号:11355013
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$11.26万
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财政年份:1999
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负责人:FURUYA Kazuhito
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依托单位:
Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation
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批准号:10305024
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$16.58万
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财政年份:1998
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负责人:FURUYA Kazuhito
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依托单位:
New STM technique for observation of ballistic electrons in semiconductors
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批准号:08405023
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$16.26万
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财政年份:1996
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负责人:FURUYA Kazuhito
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依托单位:
Basic study of coherent hot electron generation and its application for ultrafast devices
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批准号:05402040
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$8.83万
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财政年份:1993
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负责人:FURUYA Kazuhito
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依托单位:
Basic Study of Ultra-High Speed Electron wave Device Using Hot-Electron Transport in Lateral Superlattice
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批准号:01420025
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$7.3万
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财政年份:1989
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负责人:FURUYA Kazuhito
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依托单位:
Study on Fabrication Technology of GaInAs/InP Device with Ultrafine Structure
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批准号:63850077
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$8.58万
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财政年份:1988
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负责人:FURUYA Kazuhito
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依托单位:
Basic Research of GaInAs Ultrafast Transistor Using Diffraction of Ballistic Electron
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批准号:62460133
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.14万
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财政年份:1987
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负责人:FURUYA Kazuhito
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依托单位:
"Basic study on very-fast GaInAs transistor and integrated long-wavelength laser"
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批准号:60550274
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1985
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负责人:FURUYA Kazuhito
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依托单位:
海外基金