Research of High Performance Lasers and Novel Photonic Devices using Strain-Compensated Low-Dimensional Quantum Structures

针对高性能半导体激光器和新颖光子器件，我们开发了具有高质量界面和高密度纳米结构的线性补偿低尺寸量子结构，在本研究中发现了以下内容：（1）GaInAsP/InP量子线激光器的RT-CW操作（23 nm宽， 5堆叠量子导线），由电子束光刻、CH_4/H_2反应离子蚀刻和两步有机气相外延生长过程制造，首次实现。对这台量子线激光器的终生测量也在RT-CW条件下进行，而且在超过10，000小时后没有明显的性能下降。（2）GaInAsP/InP应变补偿5堆叠的压缩线性量子线激光器，其导线宽度为14纳米，并在80纳米的周期内实际使用这种制造方法。（3）GaInAsP/InP多量子线结构，在8个周期内具有18 nm和27 nm的线宽度 ... More 0 nm是由这个制造方法制造的。这些量子线结构的分布量被扫描电子显微镜和标准装置估计不到10%。（4）GaInAsP/InP部分线性补偿的垂直堆叠多量子线结构中的大能量蓝色转换的电线宽度依赖性首次被准确地解释为使用8个波段k·p理论而没有任何适合参数。它发现了一种不像量子薄膜的能量带结构，它取决于屏障区域的应变补偿数量和电线层的数目，在垂直堆栈中。（5）通过使用一种新型的分布式反射器激光器、一种类似无线的有源部分和一种带有量子线结构的被动DBR部分实现现实化。具有2.8 mA的阈值的高性能运算，具有55分贝的35%/面和亚模式抑制率（SMSR）的不同量子效应，并在RT-CW条件下获得。Less（低）

Aiming at high-performance semiconductor lasers and novel photonic devices, we have developed strain-compensated low-dimensional quantum structures with high-quality interfaces and high-density nanostructures.Accomplishments obtained in this research are as follows:(1)A RT-CW operation of GaInAsP/InP quantum-wire lasers (23 nm wide, 5 stacked quantum-wires), fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and two-step organometallic vapor-phase-epitaxial growth processes, was realized for the first time. Lifetime measurement of this quantum-wire laser was also carried out at RT-CW condition, and no noticeable performance degradation was observed even after more than 10,000 hours.(2)GaInAsP/InP strain-compensated 5-stacked compressively strained quantum-wire lasers with the wire width of 14 nm in the period of 80 nm were realized using this fabrication method.(3)GaInAsP/InP multiple-quantum-wire structures with the wire widths of 18 nm and 27 nm in the period of 8 … More 0 nm were fabricated by this fabrication method. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was estimated to be less than 10%.(4)Wire width dependence of the large energy blue shift in GaInAsP/InP partially strain-compensated vertically-stacked multiple-quantum-wire structures is accurately explained for the first time using an 8 band k・p theory without any fitting parameter. It was found that unlike quantum films, the energy-band structures of strained quantum-wires depend on the amount of strain-compensation in barrier regions and on the number of wire layers, in the vertical stack.(5)By using a lateral quantum confinement effect, a new type of distributed reflector laser, consisting of a wirelike active section and a passive DBR section with quantum-wire structure was realized. A high performance operation with a threshold current of 2.8 mA, differential quantum efficiency of 35%/facet and sub-mode suppression ratio (SMSR) of 55 dB, was obtained under a RT-CW condition. Less