Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices

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Ga_<1-x>In_XAs/GaInAsP/InP strained-quantum-film, -wire, and -box lasers have been studied both theoretically and experimentally. By introducing tensile-strained quantum-wire (QW) structure into the active layr, room temperature CW operation fo GRIN-SCH single-QW lasers with fairly low threshold current was achieved. GaInAs/GaInAsP (strained-) quantum-box (QB) structures were fabricated and obvious 0-dimensional QB size effects were observed. Temperature dependences of lasing properties were measured and compared with those of quantum-film lasers. Carrier injection process in SCH quantum-film and wire lasers was investigated.The results obtaned in this research are as follows.(1) Temperature dependence of lasing properties of quasi-quantum-wire lasers were measured and compared with those of quantum-film lasers.(2) By combining eletron beam lithography and ECR dry etching, 20-30nm wide GaInAs/GaInAsP multi-quantum-wire and -box structures with the aspect ratio greater than 6 were realized. Moreover, low damage feature of this fabrication process was confirmed by PL observation.(3) An emission energy level shift due to obvious 0-dimentional quantum-box effect was observed at 4K with GaInAs/GaInAsP single-layr (strained-) embedded quantum-box structures.(4) Lasin action of Ga_<0.67>In_<0.33>SAs/GaInAsP/InP tensile-strained quantum-box laser was demonstrated for the first time. The fabricated QB size is 30nm diameter and 12nm thick with a period of 70nm. The threshold current density was 7.6KA/cm^2 at 77K with pulse current injection.(5) Carrier capture time of SCH-QW-lasers was measured by the spontaneous emission spectra above threshold. Difference between unstrained, tensile-strained, and compressive-strained lasers was obtained.