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Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices

压应变超晶格长波长量子线半导体激光器的基础研究

基本信息

批准号：
05452184
负责人：
ARAI Shigehisa
金额：
$ 4.93万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

Ga_<1-x>In_XAs/GaInAsP/InP strained-quantum-film, -wire, and -box lasers have been studied both theoretically and experimentally. By introducing tensile-strained quantum-wire (QW) structure into the active layr, room temperature CW operation fo GRIN-SCH single-QW lasers with fairly low threshold current was achieved. GaInAs/GaInAsP (strained-) quantum-box (QB) structures were fabricated and obvious 0-dimensional QB size effects were observed. Temperature dependences of lasing properties were measured and compared with those of quantum-film lasers. Carrier injection process in SCH quantum-film and wire lasers was investigated.The results obtaned in this research are as follows.(1) Temperature dependence of lasing properties of quasi-quantum-wire lasers were measured and compared with those of quantum-film lasers.(2) By combining eletron beam lithography and ECR dry etching, 20-30nm wide GaInAs/GaInAsP multi-quantum-wire and -box structures with the aspect ratio greater than 6 were realized. Moreover, low damage feature of this fabrication process was confirmed by PL observation.(3) An emission energy level shift due to obvious 0-dimentional quantum-box effect was observed at 4K with GaInAs/GaInAsP single-layr (strained-) embedded quantum-box structures.(4) Lasin action of Ga_<0.67>In_<0.33>SAs/GaInAsP/InP tensile-strained quantum-box laser was demonstrated for the first time. The fabricated QB size is 30nm diameter and 12nm thick with a period of 70nm. The threshold current density was 7.6KA/cm^2 at 77K with pulse current injection.(5) Carrier capture time of SCH-QW-lasers was measured by the spontaneous emission spectra above threshold. Difference between unstrained, tensile-strained, and compressive-strained lasers was obtained.

对Ga_<1-x>In_xAs/GaInAsP/InP应变量子薄膜、线和盒激光器进行了理论和实验研究。通过在有源层中引入张应变量子线结构，实现了GRIN-SCH单量子线激光器的室温连续运转，并获得了较低的阈值电流。制备了GaInAs/GaInAsP（应变）量子盒（QB）结构，观察到明显的0维QB尺寸效应。测量了激光特性的温度依赖性，并与量子薄膜激光器进行了比较。本文研究了SCH量子薄膜和线激光器的载流子注入过程。(1)测量了准量子线激光器的激射特性随温度的变化关系，并与量子膜激光器进行了比较。(2)采用电子束光刻和ECR干法刻蚀相结合的方法，实现了宽20- 30 nm、深宽比大于6的GaInAs/GaInAsP多量子线盒结构。此外，PL观察证实了这种制造工艺的低损伤特性。(3)在4K时，GaInAs/GaInAsP单层（应变）嵌入量子盒结构的发光能级发生明显的0维量子盒效应. (4)首次证实了Ga_<0.67>In_<0.33>SAs/GaInAsP/InP张应变量子盒激光器的拉辛作用。所制备的量子点尺寸为直径30 nm、厚度12 nm、周期70 nm。在77 K下，脉冲电流注入的阈值电流密度为7.6KA/cm ^2。(5)利用阈值以上的自发辐射谱测量了SCH量子阱激光器的载流子俘获时间。得到了无应变、拉应变和压应变激光器之间的差异。