Research of a High-power New Type Distributed-reflector (DR) Laser

高功率新型分布式反射(DR)激光器的研究

基本信息

  • 批准号:
    01850080
  • 负责人:
  • 金额:
    $ 7.49万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B).
  • 财政年份:
    1989
  • 资助国家:
    日本
  • 起止时间:
    1989 至 1990
  • 项目状态:
    已结题

项目摘要

The main purpose of this research is to clarify the static and dynamic properties of a novel distributed reflector (DR) dynamic single mode laser.Specific results obtained in this research are as follows.The DR laser was theoretically investigated focusing on its high efficiency and high power operation as well as its single mode operation.1.5 mu m GaInAsP/InP DR laser was realized by using the big structure and OMVPE buried deep corrugation. High front of rear output power ratio, as well as low threshold current operation and large side-mode suppression ratio (SMSR) were obtained by introducing asymmetric grating using shallow grating in active region and deep grating in passive region.1.5 mu m GaInAsP/InP DR laser with SCH structure was realized using the BIG structure and OMVPE buried asymmetric corrugation. The narrow line width and small chirping characteristics of DR laser were verified experimentally.DR laser was theoretically investigated focusing on its narrow line width operation as well as high efficiency and high power operation.
本研究的主要目的是阐明一种新型的分布反射镜(DR)动态单模激光器的静态和动态特性,具体研究结果如下:从理论上研究了DR激光器的高效率、高功率运转以及单模运转。1.5 μ m GaInAsP/采用大结构和OMVPE深埋晶体实现了InP DR激光器。采用有源区浅光栅、无源区深光栅的非对称光栅结构,获得了高的前后输出功率比、低阈值电流和大的边模抑制比(SMSR)。采用BIG结构和OMVPE掩埋非对称光栅,实现了SCH结构的1. 5 μ m GaInAsP/InP DR激光器。实验验证了DR激光器的窄线宽和小啁啾特性,并从理论上研究了DR激光器的窄线宽运转以及高效率和高功率运转。

项目成果

期刊论文数量(30)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
J.I.Shim: "Spectral Characteristics of distributed reflector (DR) lasers" 12th Inter.Semiconductor Laser Conf. E-2 (1990)
J.I.Shim:“分布式反射器 (DR) 激光器的光谱特性”第 12 届 Inter.Semiconductor Laser Conf.
  • DOI:
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    0
  • 作者:
  • 通讯作者:
J. I. Shim: ""A New lambda /4 Phase-Shifted Method by the Conversion of Refractive Index Difference and Application for 1.5 mu m GaInAsP/InP DFB Laser"," Eectron. Letters. vol. 25, No. 24. 1654-1655 (1989)
J. I. Shim:“一种通过折射率差转换的新型 lambda /4 相移方法及其在 1.5 μm GaInAsP/InP DFB 激光器中的应用”,Eectron。
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    0
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M.Aoki: "Distributed Reflector(DR)Laser with High Front to Rear Output Power Ratio Using Asymmetric Grating" 7th International Conference on Integrated and Optical Fiber Communication,Kobe Japan. 21D3-4. (1989)
M.Aoki:“使用非对称光栅实现高前后输出功率比的分布式反射器(DR)激光器”第七届集成与光纤通信国际会议,日本神户。
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  • 发表时间:
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    0
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K.Komori: "Longitudinal current leakage in integrated lasers" Trans.IEICE of Japan. E73. 1384-1392 (1990)
K.Komori:“集成激光器中的纵向电流泄漏”,日本 Trans.IEICE。
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M. Aoki: ""Lasing Characteristics of 1.5 mu m GaInAsP/InP Bundle-Integrated-Guide Distributed Reflector (BIG-DR) Laser"," 15th ECOC89', Gothenburg Sweden. TuA7-3. (1989)
M. Aoki:“1.5 μm GaInAsP/InP 束集成引导分布式反射器 (BIG-DR) 激光器的激光特性”,第 15 届 ECOC89,瑞典哥德堡。
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    0
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ARAI Shigehisa其他文献

ARAI Shigehisa的其他文献

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{{ truncateString('ARAI Shigehisa', 18)}}的其他基金

Untra-compact photodetector based on plasmonic waveguide for optical wiring
用于光布线的基于等离子体波导的超紧凑光电探测器
  • 批准号:
    24656046
  • 财政年份:
    2012
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
用于Si-LSI电路中宽带芯片内/芯片间互连的InP基薄膜型光学和电子器件
  • 批准号:
    19002009
  • 财政年份:
    2007
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Specially Promoted Research
Single-mode semiconductor lasers based on quantum-nano-structures for low-power consumption and high functional operations.
基于量子纳米结构的单模半导体激光器,可实现低功耗和高功能操作。
  • 批准号:
    17206010
  • 财政年份:
    2005
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research of High Performance Lasers and Novel Photonic Devices using Strain-Compensated Low-Dimensional Quantum Structures
使用应变补偿低维量子结构的高性能激光器和新型光子器件研究
  • 批准号:
    13305021
  • 财政年份:
    2001
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research of Low Threshold Current and High Efficiency Distributed-Reflector Lasers with Wirelike Active Regions
低阈值电流高效线状有源区分布式反射激光器研究
  • 批准号:
    12555098
  • 财政年份:
    2000
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication of Semiconductor Quantum-wire and Quantum-box Structures with Bi-axial Strain and Their Applications to Photonic Devices
双轴应变半导体量子线和量子盒结构的制备及其在光子器件中的应用
  • 批准号:
    10450115
  • 财政年份:
    1998
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Study of Multiple Micro Cavity Semiconductor Lasers using Strained Quantum Wire Structure
利用应变量子线结构的多微腔半导体激光器的研究
  • 批准号:
    07455418
  • 财政年份:
    1995
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices
压应变超晶格长波长量子线半导体激光器的基础研究
  • 批准号:
    05452184
  • 财政年份:
    1993
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.
利用多维量子阱结构实现低噪声半导体激光放大器及其集成的基础研究。
  • 批准号:
    03452150
  • 财政年份:
    1991
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Basic Research of Ultra-Fine-Structure Fluoride/Si Light Emitting Device with Si Substrate
硅基超细结构氟化物/硅发光器件的基础研究
  • 批准号:
    01460137
  • 财政年份:
    1989
  • 资助金额:
    $ 7.49万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
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