Study of Multiple Micro Cavity Semiconductor Lasers using Strained Quantum Wire Structure

利用应变量子线结构的多微腔半导体激光器的研究

基本信息

  • 批准号:
    07455418
  • 负责人:
  • 金额:
    $ 1.15万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

In this work, to realize extremely low current operation of long-wavelength semiconductor lasers for communication, we have investigated the fabrication and lasing properties of strained quantum wire lasers due to increasing highly optical gain at the active region., and the theoretical analysis and fabrication of the newly proposed multiple micro cavity lasers.Results obtained in this research are as follows.1) 1.5mum-wavelength GaInAsP/InP quantum wire lasers were fabricated by electron beam lithography, and 2-step organic metal vapor phase epitaxy growth. Temperature dependence of the quantum wire lasers were measured and compared with the quantum film lasers fabricated on the same wafer. As the result, at a temperature below 200K,the internal quantum efficiency of the both lasers were almost same, and better lasing properties, such as low threshold current and high differential quantum efficiency of quantum wire lasers over quantum film lasers were confirmed. The reason for poor characteristics temperature of the quantum wire laser was considered to be due to non-radiative recombination at the interface of the quantum wire structure.2) The static characteristics and the skew in modulation of the multiple micro cavity (MMC) lasers were studied theoretically due to the design of the optimum structure for low threshold current operation, and the drive current and design consideration of an ultra low threshold current laser for optical interconnection was also investigated.3) MMC lasers with GaInAsP/InP strained-quantum-well active region were fabricated by wet chemical etching. The low threshold current density operation of 178A/cm^2 with broad contact was obtained at room temperature.4) Stripe direction dependence of mesa angle was investigated for the fabrication of high reflective facet of MMC lasers. The high aspect ratio of narrow groove (0.45mm-wide) structure was fabricated using ECR dry etching.
在这项工作中,为了实现通信用长波长半导体激光器的极低电流工作,我们研究了由于在有源区增加高光学增益而导致的应变量子线激光器的制造和激光特性,以及新提出的多微腔激光器的理论分析和制造。本研究获得的结果如下:1)1.5μm波长GaInAsP/InP量子线激光器 通过电子束光刻和两步有机金属气相外延生长制备。测量了量子线激光器的温度依赖性,并将其与同一晶圆上制造的量子薄膜激光器进行了比较。结果,在低于200K的温度下,两种激光器的内量子效率几乎相同,并且证实了量子线激光器比量子薄膜激光器具有更好的激光特性,例如低阈值电流和高微分量子效率。量子线激光器特性温度差的原因被认为是由于量子线结构界面处的非辐射复合所致。2)通过低阈值电流工作的优化结构设计、光学超低阈值电流激光器的驱动电流和设计考虑,从理论上研究了多微腔(MMC)激光器的静态特性和调制时滞。 3)采用湿法化学刻蚀方法制备了具有GaInAsP/InP应变量子阱有源区的MMC激光器。在室温下获得了178A/cm^2的低阈值电流密度操作和宽接触。4)研究了MMC激光器高反射面的制作中台面角度的条带方向依赖性。采用ECR干法刻蚀制备高深宽比的窄槽(0.45mm宽)结构。

项目成果

期刊论文数量(24)
专著数量(0)
科研奖励数量(0)
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K.C.Shin: "Fabrication and low threshold current density operation of GaInAsP/InP multiple-reflector microcavity laser" Optical and Quantum Electron.28. 487-493 (1996)
K.C.Shin:“GaInAsP/InP 多反射器微腔激光器的制造和低阈值电流密度操作”光学和量子电子。28。
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K.C.Shin: "Drive current and design consideration of an ultra-low thresold current laser for optical data communication" IEEE J. Lightwave Technology. 15・5(No.5掲載予定). (1997)
K.C.Shin:“用于光数据通信的超低阈值电流激光器的驱动电流和设计考虑”IEEE J. Lightwave Technology(第5号待出版)。
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T.Kojima: "Temperature dependences of GaInAsP/InP compressively-strained quantumwire lasers fabricated by EB lithography and 2-step OMVPE growth" Eighth Conf. On Indium Phosphide & Related Materials, (IPRM'96). ThA1-5. 731-734 (1996)
T.Kojima:“通过 EB 光刻和两步 OMVPE 生长制造的 GaInAsP/InP 压缩应变量子线激光器的温度依赖性”第八次会议。
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K.C.Shin: "Calculation of a drive current in ultra-low threshold current laser" First Optoelectron.and Commun.Conf.(OECC'96). 18P-29. 478-479 (1996)
K.C.Shin:“超低阈值电流激光器中驱动电流的计算”First Optoelectron.and Commun.Conf.(OECC96)。
  • DOI:
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  • 影响因子:
    0
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  • 通讯作者:
T.Kojima: "Temperature dependencies of GaInAsP/InP compressively-strained quantum-wire lasers fabricated by EB lithography and 2-step OMVPE growth" Eighth Conf.On Indium Phosphide & Related Materials, (IPRM'96). 731-734 (1996)
T.Kojima:“通过 EB 光刻和两步 OMVPE 生长制造的 GaInAsP/InP 压缩应变量子线激光器的温度依赖性”第八届磷化铟会议
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ARAI Shigehisa其他文献

ARAI Shigehisa的其他文献

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{{ truncateString('ARAI Shigehisa', 18)}}的其他基金

Untra-compact photodetector based on plasmonic waveguide for optical wiring
用于光布线的基于等离子体波导的超紧凑光电探测器
  • 批准号:
    24656046
  • 财政年份:
    2012
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
用于Si-LSI电路中宽带芯片内/芯片间互连的InP基薄膜型光学和电子器件
  • 批准号:
    19002009
  • 财政年份:
    2007
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Specially Promoted Research
Single-mode semiconductor lasers based on quantum-nano-structures for low-power consumption and high functional operations.
基于量子纳米结构的单模半导体激光器,可实现低功耗和高功能操作。
  • 批准号:
    17206010
  • 财政年份:
    2005
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research of High Performance Lasers and Novel Photonic Devices using Strain-Compensated Low-Dimensional Quantum Structures
使用应变补偿低维量子结构的高性能激光器和新型光子器件研究
  • 批准号:
    13305021
  • 财政年份:
    2001
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research of Low Threshold Current and High Efficiency Distributed-Reflector Lasers with Wirelike Active Regions
低阈值电流高效线状有源区分布式反射激光器研究
  • 批准号:
    12555098
  • 财政年份:
    2000
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication of Semiconductor Quantum-wire and Quantum-box Structures with Bi-axial Strain and Their Applications to Photonic Devices
双轴应变半导体量子线和量子盒结构的制备及其在光子器件中的应用
  • 批准号:
    10450115
  • 财政年份:
    1998
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices
压应变超晶格长波长量子线半导体激光器的基础研究
  • 批准号:
    05452184
  • 财政年份:
    1993
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.
利用多维量子阱结构实现低噪声半导体激光放大器及其集成的基础研究。
  • 批准号:
    03452150
  • 财政年份:
    1991
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Basic Research of Ultra-Fine-Structure Fluoride/Si Light Emitting Device with Si Substrate
硅基超细结构氟化物/硅发光器件的基础研究
  • 批准号:
    01460137
  • 财政年份:
    1989
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Research of a High-power New Type Distributed-reflector (DR) Laser
高功率新型分布式反射(DR)激光器的研究
  • 批准号:
    01850080
  • 财政年份:
    1989
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B).

相似海外基金

Development of practical theoretical calculation of semiconductor-laser gain including many-body Coulomb interactions and its experimental verifications with high-quality quantum-wire lasers
开发包括多体库仑相互作用在内的半导体激光增益实用理论计算及其使用高质量量子线激光器的实验验证
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低阈值量子线激光器的制造及其激光特性和物理研究
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  • 财政年份:
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Current-injection operation of quantum-wire lasers and verification of low threshold currents
量子线激光器的电流注入操作和低阈值电流的验证
  • 批准号:
    16360148
  • 财政年份:
    2004
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Fabrication of long-wavelength-range quantum wire lasers
长波长范围量子线激光器的制造
  • 批准号:
    15206034
  • 财政年份:
    2003
  • 资助金额:
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Lasing mechanisms in high-quality T-shaped quantum-wire lasers
高质量 T 形量子线激光器中的激光机制
  • 批准号:
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  • 财政年份:
    2002
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Stable Wavelength Strained Quantum Wire Lasers
稳定波长应变量子线激光器
  • 批准号:
    9617153
  • 财政年份:
    1997
  • 资助金额:
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Study on Fabrication of Quantum Wire Lasers
量子线激光器的制造研究
  • 批准号:
    04555083
  • 财政年份:
    1992
  • 资助金额:
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