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Study of Multiple Micro Cavity Semiconductor Lasers using Strained Quantum Wire Structure

利用应变量子线结构的多微腔半导体激光器的研究

基本信息

批准号：
07455418
负责人：
ARAI Shigehisa
金额：
$ 1.15万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455418/
关键词：
semiconductor lasers quantum wire lasers strained quantum wire lasers multiple micro cavity lasers GaInAsP compound crystal electron beam lithography organo-metallic vapor phase epitaxy dry etching 歪量子細線マイクロキャビティー GaInAsP InP 長波長レ

项目摘要

In this work, to realize extremely low current operation of long-wavelength semiconductor lasers for communication, we have investigated the fabrication and lasing properties of strained quantum wire lasers due to increasing highly optical gain at the active region., and the theoretical analysis and fabrication of the newly proposed multiple micro cavity lasers.Results obtained in this research are as follows.1) 1.5mum-wavelength GaInAsP/InP quantum wire lasers were fabricated by electron beam lithography, and 2-step organic metal vapor phase epitaxy growth. Temperature dependence of the quantum wire lasers were measured and compared with the quantum film lasers fabricated on the same wafer. As the result, at a temperature below 200K,the internal quantum efficiency of the both lasers were almost same, and better lasing properties, such as low threshold current and high differential quantum efficiency of quantum wire lasers over quantum film lasers were confirmed. The reason for poor characteristics temperature of the quantum wire laser was considered to be due to non-radiative recombination at the interface of the quantum wire structure.2) The static characteristics and the skew in modulation of the multiple micro cavity (MMC) lasers were studied theoretically due to the design of the optimum structure for low threshold current operation, and the drive current and design consideration of an ultra low threshold current laser for optical interconnection was also investigated.3) MMC lasers with GaInAsP/InP strained-quantum-well active region were fabricated by wet chemical etching. The low threshold current density operation of 178A/cm^2 with broad contact was obtained at room temperature.4) Stripe direction dependence of mesa angle was investigated for the fabrication of high reflective facet of MMC lasers. The high aspect ratio of narrow groove (0.45mm-wide) structure was fabricated using ECR dry etching.

在这项工作中，为了实现用于通信的长波长半导体激光器的极低电流工作，我们研究了应变量子线激光器的制造和激光特性，因为它在有源区域增加了高光增益。，以及新提出的多微腔激光器的理论分析和制作。本研究的结果如下：1)采用电子束光刻和两步有机金属气相外延生长制备了1.5 mm波长的GaInAsP/InP量子线激光器。测量了量子线激光器的温度依赖性，并与同一晶圆上制备的量子膜激光器进行了比较。结果表明，在低于200K的温度下，两种激光器的内部量子效率几乎相同，并且证实了量子线激光器比量子膜激光器具有低阈值电流和高差分量子效率等更好的激光特性。量子线激光器特性温度差的原因被认为是由于量子线结构界面处的非辐射复合。2)通过设计低阈值电流工作的最佳结构，从理论上研究了多微腔（MMC）激光器的静态特性和调制偏斜，并对用于光互连的超低阈值电流激光器的驱动电流和设计考虑进行了研究。3)采用湿法化学刻蚀法制备了具有GaInAsP/InP应变-量子阱活性区的MMC激光器。在室温下获得了宽触点178A/cm^2的低阈值电流密度运算。4)研究了MMC激光器高反射面制备中台面角对条纹方向的依赖关系。采用ECR干刻蚀技术制备了宽0.45mm的窄槽高径比结构。