InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
批准号:
19002009
负责人:
ARAI Shigehisa
金额:
$353.1万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Specially Promoted Research
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2011
中文摘要
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英文摘要
We investigated InP-based membrane-type optical and electronic devices for broad band and low-power consumption optical interconnection in Si-LSI circuits since the RC delay time and the power consumption in metal wires will be bottleneck of high-speed operation and high functionality of LSIs in future. As the results, we successfully demonstrated current-injection-type membrane semiconductor lasers as well as photodetectors as low-power consumption optical devices, and also terahertz devices for inter-chip high-speed interconnection.
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DOI:
10.1109/icimw.2009.5324766
发表时间:
2009-11
期刊:
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves
影响因子:
--
作者:
[M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama]
通讯作者:
M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama
InP系バリスティックトランジスタ
InP弹道晶体管
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[宮本恭幸, 古屋一仁]
通讯作者:
古屋一仁
ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET
具有异质发射器和本征沟道的垂直 InGaAs-MOSFET
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[齋藤 尚史, 楠崎智樹, 松本 豊, 宮本 恭幸, 古屋 一仁]
通讯作者:
古屋 一仁
ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製
具有异质发射器和本征沟道的垂直 InGaAs-MOSFET 的制造
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[齋藤 尚史, 金澤 徹, 宮本 恭幸, 古屋 一仁]
通讯作者:
古屋 一仁
テーパードスロットアンテナを集積した水平放射型サブTHzRTD発振器
具有集成锥形缝隙天线的水平辐射亚太赫兹 RTD 振荡器
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[浦山健太, 鈴木左文, 浅田雅洋, 杉山弘樹, 横山春喜]
通讯作者:
横山春喜
共 373 条
Untra-compact photodetector based on plasmonic waveguide for optical wiring
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批准号:24656046
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.5万
-
财政年份:2012
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负责人:ARAI Shigehisa
-
依托单位:
Single-mode semiconductor lasers based on quantum-nano-structures for low-power consumption and high functional operations.
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批准号:17206010
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$29.95万
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财政年份:2005
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负责人:ARAI Shigehisa
-
依托单位:
Research of High Performance Lasers and Novel Photonic Devices using Strain-Compensated Low-Dimensional Quantum Structures
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批准号:13305021
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.12万
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财政年份:2001
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负责人:ARAI Shigehisa
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依托单位:
Research of Low Threshold Current and High Efficiency Distributed-Reflector Lasers with Wirelike Active Regions
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批准号:12555098
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.51万
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财政年份:2000
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负责人:ARAI Shigehisa
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依托单位:
Fabrication of Semiconductor Quantum-wire and Quantum-box Structures with Bi-axial Strain and Their Applications to Photonic Devices
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批准号:10450115
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.06万
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财政年份:1998
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负责人:ARAI Shigehisa
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依托单位:
Study of Multiple Micro Cavity Semiconductor Lasers using Strained Quantum Wire Structure
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批准号:07455418
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$1.15万
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财政年份:1995
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负责人:ARAI Shigehisa
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依托单位:
Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices
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批准号:05452184
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.93万
-
财政年份:1993
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负责人:ARAI Shigehisa
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依托单位:
Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.
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批准号:03452150
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1991
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负责人:ARAI Shigehisa
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依托单位:
Basic Research of Ultra-Fine-Structure Fluoride/Si Light Emitting Device with Si Substrate
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批准号:01460137
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.52万
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财政年份:1989
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负责人:ARAI Shigehisa
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依托单位:
Research of a High-power New Type Distributed-reflector (DR) Laser
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批准号:01850080
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项目类别:Grant-in-Aid for Developmental Scientific Research (B).
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资助金额:$7.49万
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财政年份:1989
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负责人:ARAI Shigehisa
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依托单位: