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Research of Low Threshold Current and High Efficiency Distributed-Reflector Lasers with Wirelike Active Regions

低阈值电流高效线状有源区分布式反射激光器研究

基本信息

批准号：
12555098
负责人：
ARAI Shigehisa
金额：
$ 8.51万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555098/
关键词：
Semiconductor laser Quantum wire laser Strained quantum wire lasers Multiple micro cavity laser GaInAsP compound crystal Electron beam lithography Organo-metallic vapor phase epitaxy Dry etching GalnAsP混晶単一波長レーザ分布反射型レーザ分布帰還レーザ極

项目摘要

A new type of DR (distributed reflector) lasers fabricated by the same fabrication process as that of quantum-wire lasers and distributed feedback (DFB) lasters with wirelike active regions have been studied.Results obtained in this research are as follows :(1) High-performance 1.55 μm wavelength GaInAsP/InP strongly index-coupled and gain-matched distributed feedback lasers with periodic wirelike active regions were fabricated by electron beam lithography, CH_4/H_2-reactive ion etching, and organometallic vapor-phase epitaxial regrowth. This type of DFB laser with wirelike active regions can operate at very low threshold because of its strong index coupling and the reduction of the active medium volume. However, this type of DFB laser consists of a larger portion of etched/regrowth interfaces than conventional DFB laser. Therefore the reliability test of lasing characteristics is very important. A CW life test was carried out. No degradations in lasing characteristics were observed af … More ter an aging time of 8200 hours at a bias current of around 10 times the threshold.(2) By using a lateral quantum confinement effect, a new type of distributed reflector laser consisting of a wirelike active section and a passive DBR section with quantum-wire structure was demonstrated for the first time. In theoretical analysis, a waveguide loss of a DBR structure increases by only l cm^<-1> compared with the value in case of no active layers. Using this waveguide structure as a passive DBR section, a maximum reflectivity of 97 % would be obtained for the wire width of 40 nm and DBR section length of 200 μm. Threshold current of 15.4 mA, which corresponds to the threshold current density of 320 A/cm^2, was obtained for the active section length of 240 μm. The passive DBR section length of 440 μm and the stripe width of 20 μm with both facets cleaved. The differential quantum efficiency form the front facet was 16.2% and the rear facet was 0.57 %, hence an asymmetric output ratio of 28 was realized. This strong asymmetric output characteristic is a specific property of the DR laser. For a lower threshold and a single-mode operation, narrow stripe DR laser was also fabricated. As a result, Threshold current of 7.6 mA and differential quantum efficiency from the front facet of 5.1 % were obtained under RT-CW condition for the active section length of 310μm, the passive section length of 270 μm and the stripe width of 3 μm. A single-mode operation with sub-mode suppression ratio (SMSR) of 40 dB was achieved at relatively low bias level (I=1.2I_<th>). Less

本文研究了一种与量子线激光器和线状有源区分布反馈激光器相同工艺的新型DR（Distributed Reflector）激光器，取得了如下结果：（1）采用电子束光刻、CH_4/H_2反应离子刻蚀和有机金属气相外延再生长技术，制备了高性能1.55 μm波长GaInAsP/InP强折射率耦合和增益匹配的线状有源区分布反馈激光器。这种有源区为线状的分布反馈激光器由于其强折射率耦合和减小有源介质体积而可以在很低的阈值下工作。然而，这种类型的DFB激光器由比常规DFB激光器更大部分的蚀刻/再生长界面组成。因此，激光特性的可靠性测试是非常重要的。进行了连续波寿命试验。没有观察到激光特性的退化， ...更多信息在大约10倍于阈值的偏置电流下，老化时间为8200小时。(2)利用横向量子限制效应，首次提出了一种新型的分布式反射激光器，它由一个线状有源区和一个量子线结构的无源DBR区组成。在理论分析中，DBR结构的波导损耗与<-1>在没有有源层的情况下的值相比仅增加lcm 2。将这种波导结构用作被动DBR段，当线宽为40 nm，DBR段长为200 μm时，最大反射率可达97%。对于240 μm的有源区长度，阈值电流为15.4 mA，对应于320 A/cm^2的阈值电流密度。被动DBR的截面长度为440 μm，条宽为20 μm，两个面都是解理的。前端面的微分量子效率为16.2%，后端面的微分量子效率为0.57%，从而实现了28的非对称输出比。这种强非对称输出特性是DR激光器的特有特性。为了获得较低的阈值和单模工作，还制备了窄条DR激光器。结果表明，当有源区长度为310μm，无源区长度为270 μm，条宽为3 μm时，在RT-CW条件下，阈值电流为7.6mA，前端微分量子效率为5.1%。在相对较低的偏置电平（I= 1.2I_2）下实现了子模抑制比（SMSR）为40 dB的单模工作<th>。少