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Single-mode semiconductor lasers based on quantum-nano-structures for low-power consumption and high functional operations.

基于量子纳米结构的单模半导体激光器，可实现低功耗和高功能操作。

基本信息

批准号：
17206010
负责人：
ARAI Shigehisa
金额：
$ 29.95万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

项目摘要

GaInAsP/InP strained low dimensional quantum structure lasers have been studied both theoretically and experimentally as the low power consumption, high performance light sources. A new type of distributed reflector (DR) laser, fabricated by the same fabrication processes as those of quantum-wire lasers and distributed feedback (DFB) lasers with wirelike active regions, has also been studied. Results obtained in this research are as follows:(1) A GaInAsP/InP quantum wire DFB laser with the active region width of 30nm in the period of 240nm was realized by an electron beam lithography, CH_4/H_2-reactive ion etching and two-step organometnllic vapor-phase- epitaxial growth processes. By adopting low-damage fabrication processes for high-mesa stripe structures, a threshold current as low as 2.1 mA, which corresponds to a threshold current density of 176 A/cm2, and a differential quantum efficiency of 16%/facet were obtained for the stripe width of 3.4μm and the cavity length of 350μm unde … More r RT-CW condition. A single mode operation with the sub-mode suppression-ratio (SMSR) as high as 50 dB (a bias current of twice the threshold) was also achieved in the lasing wavelength of 1542nm.(2) A distributed reflector (DR) laser, which consists of the active DFB and passive DBR sections with a quantum-wire structure, was studied for the low threshold, high efficiency and stable single-mode operation. The DFB and DBR sections are integrated by using the energy blue shift due to the lateral quantum confinement effect. As a result, a threshold current as low as 1.2mA was obtained under RT-CW conditions. The maximum differential quantum efficiency at the front facet was realized to be 36%. Furthermore a sub-mA operation of a DR laser has been realized with a higher index coupling coefficient of 570 cm^<-1> utilizing a deep DFB grating region in the active section. A minimum threshold current of 0.8mA (threshold current density of 180A/cm^2) and the differential quantum efficiency from the front facet was 20% have been realized. Stable single mode characteristics were preserved with a SMSR value of 41 dB at a bias current of twice threshold current.(3) A single mode operation and a high characteristic temperature operation of 1599nm GaInAsP/InP quantum-wirelike DFB lasers were achieved by adopting the Bragg wavelength detuning from the gain peak of a 54nm quantum wire active regions with a period of 247.5nm. A single mode operation with the sub-mode suppression-ratio (SMSR) as high as 51 dB (a bias current of twice the threshold under RT-CW condition) was achieved. A fixed single-mode operation without a mode hopping over a temperature range between 10℃ and 85℃ was achieved. The minimum threshold current of 5.4mA (current density of 520A/cm^2) was obtained at 50℃. Moreover, the changes of threshold current densities and differential quantum efficiencies as low as±19% and 24%, respectively, were obtained. Less

GaInAsP/InP应变低维量子结构激光器作为一种低功耗、高性能的光源，在理论和实验上都得到了广泛的研究。本文还研究了一种新型的分布反射（DR）激光器，它采用与量子线激光器和具有线状有源区的分布反馈（DFB）激光器相同的制造工艺。（1）采用电子束光刻、CH_4/H_2反应离子刻蚀和两步有机金属气相外延生长工艺，实现了有源区宽度为30 nm、周期为240 nm的GaInAsP/InP量子线DFB激光器。采用低损伤的高台面条形结构工艺，在3.4μm的条宽和350μm的腔长下，获得了低至2.1mA的阈值电流，对应的阈值电流密度为176 A/cm ~ 2，微分量子效率为16%/面。 ...更多信息 r RT-CW条件。在1542 nm的激光波长下，获得了子模抑制比（SMSR）高达50 dB（偏置电流为阈值的2倍）的单模工作。(2)为了实现低阈值、高效率和稳定的单模工作，研究了一种由量子线结构的有源分布反馈（DFB）和无源分布反射（DBR）组成的分布反射激光器。利用横向量子限域效应引起的能量蓝移，将分布反馈和分布布拉格反射器两部分进行了积分。结果表明，在RT-CW条件下，阈值电流低至1.2mA。在前端面实现了最大微分量子效率为36%。此外，利用有源部分中的深DFB光栅区域，已经实现了DR激光器的亚mA操作，具有570 cm 2的较高折射率耦合系数<-1>。最小阈值电流为0.8mA（阈值电流密度为180 A/cm ^2），从前端面的微分量子效率为20%。在阈值电流两倍的偏置电流下，保持稳定的单模特性，SMSR值为41 dB。(3)采用周期为247.5nm的54 nm量子线有源区的布拉格波长与增益峰的失谐量，实现了1599 nm GaInAsP/InP类量子线DFB激光器的单模和高特征温度运转。在单模工作时，子模抑制比（SMSR）高达51 dB（RT-CW条件下，偏置电流为阈值的2倍）。在10℃ ~ 85℃的温度范围内，实现了固定单模工作，无跳模现象。在50℃时，获得了5.4mA的最小阈值电流（电流密度为520 A/cm ^2）。阈值电流密度和微分量子效率的变化分别为±19%和24%。少