Untra-compact photodetector based on plasmonic waveguide for optical wiring
Untra-compact photodetector based on plasmonic waveguide for optical wiring
批准号:
24656046
负责人:
ARAI Shigehisa
金额:
$2.5万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2014-03-31
中文摘要
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英文摘要
Ultra-compact and high-speed waveguide type photodetector and optical modulator by introducing the concept of plasmonics into conventional semiconductor optical devices have been investigated for on-chip optical wiring.As for the photodetector using plasmonic waveguide, the coupling efficiency to 500-nm wide waveguide and the propagation loss were calculated by FEM (finite element method) analysis and the device structure was fabricated. As for the electro-absorption type plasmonic modulator, a mode analysis combining carrier density and FEM revealed that the moulation efficiency was 4.5 dB/ micronmeter which corresponds to 2-3 times better value than that previously reported for plasmonic modulators.
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【解説】 オンチップ光通信に向けたプラズモニクス ~世界の今とこれから~
【解说】片上光通信的等离子学~世界的现状与未来~
DOI:
--
发表时间:
2013
期刊:
光アライアンス(日本工業出版)
影响因子:
--
作者:
[雨宮智宏, 荒井滋久]
通讯作者:
荒井滋久
ギャッププラズモンとITOを利用したGaInAsP/InP GSPP変調器の特性解析
使用间隙等离子体和 ITO 的 GaInAsP/InP GSPP 调制器特性分析
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[村井英淳, 雨宮智宏, 顧之琛, 西山伸彦, 荒井滋久]
通讯作者:
荒井滋久
シリコンCMOSとの融合集積を目指したIII-V族光電子デバイスの現状と展望
硅CMOS融合集成III-V族光电器件现状与展望
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[田山純平, 榎本薫里, 芦原聡, 栗原貴之,山口啓太,中嶋誠,渡邊浩,末元徹, 荒井滋久]
通讯作者:
荒井滋久
Electrically-driven Permeability- controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial
使用马赫曾德干涉仪和超材料的电驱动磁导率控制光调制器
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[T. Amemiya, T. Kanazawa, A. Ishikawa, S. Myoga, E. Murai, T. Shindo, J. Kang, N. Nishiyama, Y. Miyamoto, T. Tanaka, and S. Arai]
通讯作者:
and S. Arai
荒井・西山伸彦研究室 研究内容
Arai/Nobuhiko Nishiyama 实验室研究内容
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 41 条
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
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批准号:19002009
-
项目类别:Grant-in-Aid for Specially Promoted Research
-
资助金额:$353.1万
-
财政年份:2007
-
负责人:ARAI Shigehisa
-
依托单位:
Single-mode semiconductor lasers based on quantum-nano-structures for low-power consumption and high functional operations.
-
批准号:17206010
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$29.95万
-
财政年份:2005
-
负责人:ARAI Shigehisa
-
依托单位:
Research of High Performance Lasers and Novel Photonic Devices using Strain-Compensated Low-Dimensional Quantum Structures
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批准号:13305021
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.12万
-
财政年份:2001
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负责人:ARAI Shigehisa
-
依托单位:
Research of Low Threshold Current and High Efficiency Distributed-Reflector Lasers with Wirelike Active Regions
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批准号:12555098
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.51万
-
财政年份:2000
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负责人:ARAI Shigehisa
-
依托单位:
Fabrication of Semiconductor Quantum-wire and Quantum-box Structures with Bi-axial Strain and Their Applications to Photonic Devices
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批准号:10450115
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.06万
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财政年份:1998
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负责人:ARAI Shigehisa
-
依托单位:
Study of Multiple Micro Cavity Semiconductor Lasers using Strained Quantum Wire Structure
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批准号:07455418
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$1.15万
-
财政年份:1995
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负责人:ARAI Shigehisa
-
依托单位:
Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices
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批准号:05452184
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.93万
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财政年份:1993
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负责人:ARAI Shigehisa
-
依托单位:
Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.
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批准号:03452150
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1991
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负责人:ARAI Shigehisa
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依托单位:
Basic Research of Ultra-Fine-Structure Fluoride/Si Light Emitting Device with Si Substrate
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批准号:01460137
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.52万
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财政年份:1989
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负责人:ARAI Shigehisa
-
依托单位:
Research of a High-power New Type Distributed-reflector (DR) Laser
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批准号:01850080
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项目类别:Grant-in-Aid for Developmental Scientific Research (B).
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资助金额:$7.49万
-
财政年份:1989
-
负责人:ARAI Shigehisa
-
依托单位:
海外基金