Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.

利用多维量子阱结构实现低噪声半导体激光放大器及其集成的基础研究。

• 批准号: 03452150
• 负责人: ARAI Shigehisa
• 金额: $ 4.22万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452150/
• 关键词: Semiconductor laser amplifier; Multi-dimensional quantum well; Quantum wire; Quantum box; Noise; Noise figure; Regrowth; Tapered waveguide; 自然放出光間ビート雑音; 量子箱; テ-パ状導波路半導体光増幅器; 利得飽和; DFBレ-ザ; 動的単一モ-ドレ-ザ

The main purpose of this study is to establish the basis of multi-dimensional quantum well semiconductor laser amplifier.Results obtained in this research are as follows.Theoretical noise characteristics of a semiconductor laser amplifier with quantum-wire and quantum-box structure were analyzed using density matrix theory. It is clarified that the minimum noise figure can be reduced to 3.3dB, which is close to theoretical limit of 3dB, in the quantum-box structures.A 1.5mu m quantum-wire semiconductor laser was realized using EB lithography and OMVPE regrowth method. In order to remove the problem of the regrowth interface, the semiconductor laser was grown on p-Inp substrate and the surface treatment was done. As a result, the low threshold current (- 50mA) CW operation is attained in 1.5mu m GaInAs/GaInAsP/InP quantum-wire laser.Amplification and propagation characteristics of tapered waveguide traveling wave-semiconductor laser amplifier (TTW-SLA) were analyzed. It is clarified that the tapered structures provide improvements in saturation output power of 13dB and efficiency of 20% compared to conventional SLAs.

本研究的主要目的是为建立多维量子阱半导体激光放大器奠定基础。本研究的结果如下：利用密度矩阵理论分析了具有量子线和量子盒结构的半导体激光放大器的理论噪声特性。阐明了在量子盒结构中，最小噪声系数可降至3.3dB，接近3dB的理论极限。利用EB光刻和OMVPE再生技术实现了1.5 μ m的量子线半导体激光器。为了消除再生界面的问题，在p-Inp衬底上生长半导体激光器，并进行了表面处理。结果表明，在1.5 μ m GaInAs/GaInAsP/InP量子线激光器中实现了低阈值电流（- 50mA）连续工作。分析了锥形波导行波半导体激光放大器（TTW-SLA）的放大和传播特性。结果表明，与传统sla相比，锥形结构可提高13dB的饱和输出功率和20%的效率。

项目成果

K.Kudo: "Reduction of Effective Linewidth Enhancement Factor α eff of DFB Laser with Complex Coupling Coefficient" IEEE Photon.Tech.Lett.4. 531-534 (1992)

K.Kudo：“具有复杂耦合系数的 DFB 激光器的有效线宽增强因子 α eff 的降低”IEEE Photon.Tech.Lett.4 (1992)。

K.Komori: "Noise in Semiconductor Laser Amplifiers with Quantum box structure" IEEE Photon.Tech.Lett.3. 39-41 (1991)

K.Komori：“具有量子盒结构的半导体激光放大器中的噪声”IEEE Photon.Tech.Lett.3。

G.Bendelli: "Gain Saturation and Propagation Characteristics of Index-Guided Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA's)" IEEE J.Quantum Electron. 28. 447-458 (1992)

G.Bendelli：“折射率引导锥形波导行波半导体激光放大器 (TTW-SLA) 的增益饱和和传播特性”IEEE J.Quantum Electron。

J.Dong: "A GaInAsP/InP Grating Filter Multiple-Stripe Laser Array Operating in In-Phase Lateral- and Single-Longitudinal-Mode" IEEE Photon.Technol.Lett. 4. 491-494 (1992)

J.Dong：“以同相横向和单纵向模式运行的 GaInAsP/InP 光栅滤波器多条激光阵列”IEEE Photon.Technol.Lett。

J.Dong: "Single Wavelength Grating Filter Laser Array with Ga_<3.3>In_<0.7>As/GaInAsP/InP Strained MQW Structure" IEEE Photon.Tech.Lett. 4. 957-960 (1992)

J.Dong：“具有 Ga_<3.3>In_<0.7>As/GaInAsP/InP 应变 MQW 结构的单波长光栅滤波器激光阵列”IEEE Photon.Tech.Lett。