Fundamental study on realization of low noise semiconductor laser amplifier using multi-dimensional quantum well structure and its integration.

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The main purpose of this study is to establish the basis of multi-dimensional quantum well semiconductor laser amplifier.Results obtained in this research are as follows.Theoretical noise characteristics of a semiconductor laser amplifier with quantum-wire and quantum-box structure were analyzed using density matrix theory. It is clarified that the minimum noise figure can be reduced to 3.3dB, which is close to theoretical limit of 3dB, in the quantum-box structures.A 1.5mu m quantum-wire semiconductor laser was realized using EB lithography and OMVPE regrowth method. In order to remove the problem of the regrowth interface, the semiconductor laser was grown on p-Inp substrate and the surface treatment was done. As a result, the low threshold current (- 50mA) CW operation is attained in 1.5mu m GaInAs/GaInAsP/InP quantum-wire laser.Amplification and propagation characteristics of tapered waveguide traveling wave-semiconductor laser amplifier (TTW-SLA) were analyzed. It is clarified that the tapered structures provide improvements in saturation output power of 13dB and efficiency of 20% compared to conventional SLAs.