课题基金 / 基金详情

Super Highly Sensitive Non visible Imaging Devices Using Vacuum Nano Technology

Super Highly Sensitive Non visible Imaging Devices Using Vacuum Nano Technology
采用真空纳米技术的超灵敏不可见成像装置
批准号:
15360190
负责人:
SAWADA Kazuaki
金额:
$8.45万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005

项目摘要

项目成果

SAWADA Kazuaki的其他基金

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相关文献

中文摘要
翻译
本课题的重点是实现高灵敏度的可见光光电阴极和可探测2 μ m以上波长的红外光电阴极,并提出了一种新型光电探测器--“光敏浮置场发射体(PFFE)”。PFFE由n型锥形场致发射器和Si p-n光电二极管组合而成。该器件制作在减薄的硅衬底上,从背面照射。在场发射器中构造p-n光电二极管,并且n+区域被p+区域分隔以检测二维光分布。量子效率达到70%。研究了一种基于Pb(Zr,Ti)O_3(PZT)薄膜场发射原理的红外光传感器。能够提高灵敏度以执行表面抛光,并且抛光的发射平面的发射效率增加到未抛光的发射平面的发射效率的两倍。在低红外光照射条件下,发射电流的噪声水平非常大。为了使用微通道板(MCP)装置,对发射电子进行放大。发射电子可放大40倍,在低辐照条件下可清晰观察到发射电子。电子发射型红外光传感器还可用于在低照射条件下检测红外光。
英文摘要
The porous of this project was realization of a visible photocathode with high sensitivity, and infrared photocathode which can detect above 2 micron wavelength.A new type photodetector called "photosensitive floating field emitter, PFFE" has been proposed. The PFFE was combined the n-type cone-shaped triode field emitter with Si p-n photodiode area. The device was fabricated on a thinned silicon substrate to irradiate from the backside. A p-n photodiode was constructed in a field emitter, and the n+ region was separated by p+ regions to detect two- dimensional light distributions. The quantum efficiency reached to 70%. The efficiency will increase to provide non refractive film on the surface.An infrared light sensor based on principle of a field emission from Pb(Zr,Ti)O3 (PZT) thin plate has been studied. The sensitivity is able to be improved to perform a surface polish, and the emission efficiency of polished emission plane increased to twice than that of the unpolished emission plane. On a low infrared light irradiation condition, a noise level of emission current was very large. To use a Micro-Channel-Plate (MCP) device, the amplification of the emission electrons was carried out. The emission electrons could be multiplied 40 times, the emission electron was clearly observed under low irradiation conditions. The electron emission type infrared light sensor is also useful to detect an infrared light on low irradiation condition.
期刊论文(59)
专著(0)
科研奖励(0)
会议论文
Electrical Characteristics of Epitaxial γ-Al2O3 Films for Quantum Device
量子器件用外延γ-Al2O3薄膜的电学特性
DOI: --
发表时间: 2005
期刊: International Semiconductor Device Research Symposium
影响因子: --
作者: [Jang-Seop Kim, Kazuaki Sawada, Makoto Ishida, Mohammad Shahjahan]
通讯作者: Mohammad Shahjahan
DOI: --
发表时间: 2003
期刊: Japanese Journal of Applied Vol.42 Part.1, No.9A
影响因子: --
作者: [Daisuke Takamuro, Hidekuni Takao, Kazuaki Sawada, Makoto Ishida]
通讯作者: Makoto Ishida
DOI: --
发表时间: 2003
期刊: The 16th International Vacuum Microelectronics Conference (IVMC2003)
影响因子: --
作者: [Daisuke Takamuro, Hidekuni Takao, Kazuaki Sawada, Makoto Ishida]
通讯作者: Makoto Ishida
Daisuke Akai, Kazuaki Sawada, Makoto Ishida: "Fabrication of Pb(Zr,Ti)O_3 Films on Epitaxial γ-Al2O_3(001)/Si(001) Substrates"Journal of Crystal Growth. Vol.259, No.1-2. 90-94 (2003)
Daisuke Akai、Kazuaki Sawada、Makoto Ishida:“在外延 γ-Al2O_3(001)/Si(001) 基板上制备 Pb(Zr,Ti)O_3 薄膜”《晶体生长杂志》第 259 卷,第 1-2 期。 90-94 (2003)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
共 43 条
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    • 批准号:
      21246058
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $29.54万
    • 财政年份:
      2009
    • 负责人:
      SAWADA Kazuaki
    • 依托单位:
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      20500518
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    • 资助金额:
      $2.16万
    • 财政年份:
      2008
    • 负责人:
      SAWADA Kazuaki
    • 依托单位:
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    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.59万
    • 财政年份:
      2005
    • 负责人:
      SAWADA Kazuaki
    • 依托单位:
    A study on an effective leaning in a physical education class by emphasizing the consciousness of relatinship
    • 批准号:
      10680025
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.98万
    • 财政年份:
      1998
    • 负责人:
      SAWADA Kazuaki
    • 依托单位:
    海外基金