Analyses of Photo-induced Surface Reaction Processes during Plasma Sputtering
Analyses of Photo-induced Surface Reaction Processes during Plasma Sputtering
批准号:
17340174
负责人:
HAMAGUCHI Satoshi
金额:
$9.28万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006
中文摘要
本项目的目标是澄清反应等离子体溅射过程中光子注入(特别是紫外线:UV)到材料表面的作用。经验上已经知道,在反应等离子体溅射(即,反应性离子蚀刻)工艺中,光子注入显著影响溅射性能,但是光致非平衡表面化学反应的详细机制几乎不为人知。在本项目中,我们分析了各种蚀刻过程的表面反应机制,以澄清光子注入如何影响蚀刻性能,使用分子动力学(MD)模拟和质量选择离子束注入系统。特别是在本年度,即本项目的最后一年,我们进行了以下课题的研究:(1)分子动力学模拟中激发态原子的原子间势函数和光子与材料中原子相互作用的模型化。(2)基于从质量选择离子束注入系统获得的单能离子束和连接到离子束系统的UV光源的光的同时注入实验,检查离子束和光子注入的协同效应。通过这样的研究,我们已经评估了UV对反应离子蚀刻的影响(即,等离子体溅射),并阐明了在工业中广泛使用的材料(例如二氧化硅和某些有机聚合物)的反应离子蚀刻工艺期间表面反应的各种特性。
英文摘要
The goal of this project is to clarify the role of photon injections (especially those of ultra violet : UV) into the material surface during reactive plasma sputtering. It has been empirically known that, in reactive plasma sputtering (i.e., reactive ion etching) processes, photon injections significantly affect sputtering properties, but detailed mechanisms of the photo-induced non-equilibrium surface chemical reactions have been hardly known. In the present project, we have analyzed surface reaction mechanisms of various etching processes to clarify how photon injections can affect etching properties, using molecular dynamics (MD) simulations and a mass-selected ion beam injection system. Especially in this fiscal year, which is the final year of the present project, we have worked on the following topics : (1) Modeling of interatomic potential functions for excited atoms and interaction of photons and atoms in the material for MD simulations. (2) Examination of synergetic effects of ion beams and photon injections, based on the simultaneous injection experiments of a mono-energetic ion beam obtained from the mass selected ion beam injection system and light from a UV light source attached to the ion beam system. Through such research, we have evaluated effects of UV on reactive ion etching (i.e., plasma sputtering) and clarified various characteristics of surface reactions during reactive ion etching processes for materials widely used in the industry, such as silicon dioxide and some organic polymers.
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Control of atomic layer degradation on Si substrate,
控制硅衬底上原子层退化,
DOI:
--
发表时间:
2007
期刊:
J. Vac. Sci. Tech. A (印刷中)
影响因子:
--
作者:
[Y.Nakamura, T.Tatsumi, S.Kobayashi, K.Kugimiya, T.Harano, A.Ando, T.Kawase, S.Hamaguchi, S.Iseda]
通讯作者:
S.Iseda
Molecular dynamics simulation analyses on injection angle dependence of SiO_2 sputtering yields by fluorocarbon beams
氟碳束射入角度对SiO_2溅射产率依赖性的分子动力学模拟分析
DOI:
--
发表时间:
2007
期刊:
Thin Solid films (印刷中)
影响因子:
--
作者:
[T.Kawase, S.Hamaguchi]
通讯作者:
S.Hamaguchi
Temporal evolution of ion fragment production from dimethylsilane by a hot tungsten wire and compounds deposited on the tungsten surface
通过热钨丝和沉积在钨表面的化合物从二甲基硅烷产生离子碎片的时间演化
DOI:
--
发表时间:
2007
期刊:
Jpn. J. Appl. Phys. (印刷中)
影响因子:
--
作者:
[S.Yoshimura, A.Toh, M.Kiuchi, S.Hamaguchi]
通讯作者:
S.Hamaguchi
Molecular dynamics simulations of organic polymer dry etching at high substrate temperatures
高基板温度下有机聚合物干法蚀刻的分子动力学模拟
DOI:
--
发表时间:
2007
期刊:
Jpn. J. Appl. Phys. (印刷中)
影响因子:
--
作者:
[M.Yamashiro, H.Yamada, S.Hamaguchi]
通讯作者:
S.Hamaguchi
フリーマン型イオン源におけるメチルシランのフラグメントイオンとタングステンワイヤ表面状態
Freeman 离子源中的甲基硅烷碎片离子和钨丝表面状况
DOI:
--
发表时间:
2006
期刊:
真空 49 (6)
影响因子:
--
作者:
[藤章至, 吉村智, 杉本敏司, 木内正人, 浜口智志]
通讯作者:
浜口智志
共 24 条
Genetic analysis of the sex-determining cascade of medaka, Oryzias latipes, using sex-reversals identified in wild populations.
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批准号:24570070
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.49万
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财政年份:2012
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负责人:HAMAGUCHI Satoshi
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依托单位:
Systematic Study Analyses of radical-surface interaction in plasma bio-processing
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批准号:22244075
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.37万
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财政年份:2010
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负责人:HAMAGUCHI Satoshi
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依托单位:
Functional Analysis on the sex-related genes using the inter-specific hybrids among Oryzias fishes.
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批准号:21570221
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2009
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负责人:HAMAGUCHI Satoshi
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依托单位:
Elementary processes of photon, radical, and electron irradiation and their synergetic effects for plasma-surface interaction
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批准号:19204056
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.29万
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财政年份:2007
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负责人:HAMAGUCHI Satoshi
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依托单位:
Study of Statistical Dynamic properties of Strongly Coupled Dusty Plasmas using Molecular Dynamics Simulations
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批准号:13680556
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.62万
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财政年份:2001
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负责人:HAMAGUCHI Satoshi
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依托单位:
Analyses of Reactive Plasma Dynamics by Particle Simulations
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批准号:11680484
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.56万
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财政年份:1999
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负责人:HAMAGUCHI Satoshi
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依托单位:
CONSTRUCTION OF A MONITERING SYSTEM OF ENDOCRINE DISRUPTING SUBSTANCES USING MEDAKA
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批准号:11839006
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:1999
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负责人:HAMAGUCHI Satoshi
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依托单位:
GENETIC CONTROL MECHANISMS OF SEX DETERMINATION IN ORYZIAS FISHES
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批准号:07660240
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
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财政年份:1995
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负责人:HAMAGUCHI Satoshi
-
依托单位:
Analysis on the interactions between germ cells and somatic cells in the developing fish gonads.
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批准号:01540616
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1989
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负责人:HAMAGUCHI Satoshi
-
依托单位:
海外基金