Establishment of innovational materials surface treatment / modification technology with using supercritical cluster plasma fluid

(A)我们在高压H_2O中产生了微米尺度的放电等离子体，并将其提升到超临界状态。在我们以前的文章中，我们报道了在高压CO_2下击穿电压的两个特殊特征。第一个是帕邢曲线的右手边向下移动超过约2.5 MPa，第二个是在临界点附近的击穿电压急剧下降。实验证实了这些特性在H_2O和H_2O中也能观察到，尽管它们之间存在着一些差异。考虑密度涨落项艾德的理论拟合与实验结果吻合得很好，特别是对于密度涨落项。我们认为这些独特的特征是由电子-粒子截面□、电离势□_i和二次电子系数ε ′的减小以及放电空间的变化引起的。(B)诊断了超临界CO_2介质阻挡放电（DBD）的内部状态 ...更多信息 等离子体的显微拉曼光谱。在等离子体内部1388 cm-1附近的CO_2的拉曼谱带中，没有观察到与CO_2浓度降低相对应的大的波数位移。实验还发现，与其它高压条件相比，CO_2等离子体的拉曼谱带在临界点附近发生了局部移动。(C)在最佳工艺条件下，采用介质阻挡放电方法，在sc-CO2和Ar气氛中成功地沉积了致密的Cu-C复合薄膜。对scCO_2和scAr中DBD的产生进行了诊断。根据V-I测量，我们的SCF等离子体的负电荷密度估计为大于10 μ <18>cm-3<-3>，这表明我们的SCF等离子体具有高密度的离子和电子，这是获得高反应性等离子体所需的。成功地获得了Cu/C薄膜，并研究了其对电源频率和外加电压的依赖性。在scCO_2和scAr气氛中制备的薄膜中Cu含量最高分别为10%和60%。这一结果表明Ar在合成材料的细度方面具有优势。在scCO_2和scAr中，沉积速率分别为300 nm/min和190 nm/min。这些结果表明，超临界流体等离子体处理实现高速金属薄膜沉积的潜力。此外，带状线微波微等离子体也产生，其中衬底条件，如温度和距离等离子体，可以独立于等离子体控制。少

(A) We generated micrometer-scale discharge plasma in high-pressure H_2O and Xe up to supercritical conditions. In our previous paper, we reported the existence of two peculiar features in the breakdown voltages under high-pressure CO_2. The first one was the downward shift at the right-hand side of Paschen's curve above about 2.5 MPa, and the second one was the drastic decrease in the breakdown voltages near the critical point. We have experimentally confirmed that these features are also observed in H_2O and Xe, even though there are some differences among these materials. Our theoretical fitting involving a density fluctuation term ED agrees well with the experimental results, especially for Xe. We suppose that these unique features are brought about by decreases in the electron-to-particle cross section □, ionization potential □_i, and secondary electron coefficient □', and changes in the discharge space.(B) We diagnosed the inner state of the supercritical CO_2-DBD (dielectric bar … More rier discharge) plasma by micro-Raman spectroscopy. From Raman band of CO_2 near 1388 cm' inside the plasma, the large-wavenumber shift, which correspond to a decrease of CO_2 density was not observed. It was also found that the Raman band obtained from CO_2 with the plasma showed a local shift near the critical point, comparing with other high-pressure condition.(C) Under an optimal condition, dense Cu-carbon composite films were successfully deposited by dielectric barrier discharge method in sc-CO_2 and Ar. Diagnostics of DBD generated in scCO_2 and scAr was conducted. From V-I measurement, the negative charge density of our SCF plasma was estimated to be more than 10^<18> cm^<-3>, which shows that our SCF plasma has a high density of ions and electrons, which are required for obtaining a highly reactive plasma. Cu/C films were successfully obtained and its dependence on power frequency and applied voltage was studied. Cu content of films obtained in an scCO_2 and scAr was about 10 % and 60 % maximum, respectively. This result suggests the advantage of Ar in terms of the fineness of synthesized materials. The deposition rate was about 300 nm/min in scCO_2 and 190 nm/min in scAr. These results suggest the potential of an SCF plasma processing for realization of high-speed metal film deposition. Moreover, strip-line microwave micro plasma was also generated, in which substrate conditions, such as temperature and distance from plasma, can be controlled independently of plasma. Less