Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FET

InSb在超快和低功耗器件中的应用引起了人们的极大兴趣。为了实现InSb基场效应晶体管，我们采用一种新的生长方法--表面重构辅助生长法生长了InSb和AlInSb薄膜，并对它们进行了评价。利用Si（111）-xInxIn-In表面重构技术成功地生长了全旋转InSb和AlInSb薄膜<7><3>。然而，由于其高霍尔浓度和低电阻率，试验场效应管不能作为晶体管工作。

InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we grew the InSb and AlInSb films using new growth method called "Surface Reconstruction assisted growth", and evaluated them. The fully rotated InSb and AlInSb films were successfully grown using Si(111)-√<7>×√<3>-In surface reconstruction. However, due to its high hall concentration and low resistivity, trial FET didn't work as a transistor.